Effects of response quantisation on the accuracy of transient response test results

1995 ◽  
Vol 142 (5) ◽  
pp. 334 ◽  
Author(s):  
I.C. Butler ◽  
D. Taylor ◽  
T.I. Pritchard
2015 ◽  
Vol 82 ◽  
pp. 39-47 ◽  
Author(s):  
Roque Borinaga-Treviño ◽  
Jose Norambuena-Contreras ◽  
Daniel Castro-Fresno

2016 ◽  
Author(s):  
Linden Jensen-Page ◽  
Guillermo A. Narsilio ◽  
Asal Bidarmaghz ◽  
Ian W. Johnston

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Meng Ma ◽  
Jianlei Liu ◽  
Zaitian Ke ◽  
Yan Gao

A bearing capacity estimation method for bridge piles was developed. In this method, the pulse echo test was used to select the intact piles; the dynamic stiffness was obtained by the impulse transient response test. A total of 680 bridge piles were tested, and their capacities were estimated. Finally, core drilling analysis was used to check the reliability of this method. The results show that, for intact piles, an obvious positive correlation exits between the dynamic stiffness and bearing capacity of the piles. The core drilling analysis proved that the estimation method was reliable.


2021 ◽  
Vol 42 (11) ◽  
pp. 114101
Author(s):  
Yuwei Cai ◽  
Zhaohao Zhang ◽  
Qingzhu Zhang ◽  
Jinjuan Xiang ◽  
Gaobo Xu ◽  
...  

Abstract The HfO2-based ferroelectric field effect transistors (FeFET) have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits. This article systematically investigates the transient response of negative capacitance (NC) fin field-effect transistors (FinFETs) through two kinds of self-built test schemes. By comparing the results with those of conventional FinFETs, we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain. Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater (about 80% with NC NMOS) than the on-state current of the conventional transistor, indicating the great potential of the NC FET for future high-frequency applications.


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