Temperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors

2016 ◽  
Vol 11 (2) ◽  
pp. 114-117 ◽  
Author(s):  
Mahmoud Ossaimee ◽  
Mona El Sabbagh ◽  
Salah Gamal
Keyword(s):  
Carbon Nanotube ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Electrical Characteristics

Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors

2013 ◽  
Author(s):  
V. A. Sydoruk ◽  
M. V. Petrychuk ◽  
A. Ural ◽  
G. Bosman ◽  
A. Offenhäusser ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Transport Regime ◽  
Channel Transport

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Optimization of Schottky barrier carbon nanotube field effect transistors

2005 ◽  
Vol 81 (2-4) ◽  
pp. 428-433 ◽  
Author(s):  
M. Pourfath ◽  
E. Ungersboeck ◽  
A. Gehring ◽  
B.H. Cheong ◽  
W.J. Park ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors

2012 ◽  
Vol 136 (17) ◽  
pp. 174704 ◽  
Author(s):  
Argo Nurbawono ◽  
Aihua Zhang ◽  
Yongqing Cai ◽  
Yihong Wu ◽  
Yuan Ping Feng ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Contacts ◽  
And Performance
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