Simulation of carrier transport in carbon nanotube field effect transistors

Author(s):  
E. Ungersbock ◽  
A. Gehring ◽  
H. Kosina ◽  
S. Selberherr ◽  
Byoung-Ho Cheong ◽  
...  
2010 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
Davide Mencarelli ◽  
Luca Pierantoni ◽  
Andrea D. Donato ◽  
Tullio Rozzi

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.


2019 ◽  
Vol 66 (8) ◽  
pp. 3535-3540 ◽  
Author(s):  
Lin Xu ◽  
Chenguang Qiu ◽  
Chenyi Zhao ◽  
Zhiyong Zhang ◽  
Lian-Mao Peng

2014 ◽  
Vol 6 (3) ◽  
pp. 287-292 ◽  
Author(s):  
Jingqi Li ◽  
Weisheng Yue ◽  
Zaibing Guo ◽  
Yang Yang ◽  
Xianbin Wang ◽  
...  

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