scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 4116-4119 ◽  
Author(s):  
Yutaka Ohno ◽  
Shinya Iwatsuki ◽  
Tatsuki Hiraoka ◽  
Toshiya Okazaki ◽  
Shigeru Kishimoto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Metal Catalyst

Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition

2005 ◽  
Vol 86 (11) ◽  
pp. 113115 ◽  
Author(s):  
Daisuke Kaminishi ◽  
Hirokazu Ozaki ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes

2006 ◽  
Vol 45 (6B) ◽  
pp. 5485-5489 ◽  
Author(s):  
Hirofumi Ohnaka ◽  
Yoshihiro Kojima ◽  
Shigeru Kishimoto ◽  
Yutaka Ohno ◽  
Takashi Mizutani
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor

Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition

2005 ◽  
Author(s):  
Lorraine Rispal ◽  
Yordan Stefanov ◽  
Rudolf Heller ◽  
Gerhard Tzschockel ◽  
Gisela Hess ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Conductive Afm

Synthesis of Few-Layer and Multi-Layer Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transferring Processes

2009 ◽  
Vol 1205 ◽  
Author(s):  
Daiyu Kondo ◽  
Katsunori Yagi ◽  
Naoki Harada ◽  
Motonobu Sato ◽  
Mizuhisa Nihei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Si Substrate ◽  
Layer Graphene ◽  
Catalyst Film ◽  
Fe Catalyst

AbstractWe have fabricated top-gated field effect transistors (FETs) using graphene synthesized by chemical vapor deposition directly on a SiO2/Si substrate without using any transferring processes. Graphene was synthesized on an Fe catalyst film on the substrate at 650°C. The catalyst film was then etched after both ends of the graphene were fixed by source and drain electrodes, leaving the graphene channel connecting the two electrodes. Top-gated FETs were then made by covering graphene channels with HfO2 and depositing top electrodes. The drain current was successfully modulated by the gate voltage and exhibited the bipolar behavior that is characteristic of graphene. Also, it has been shown that graphene channels can sustain an electric current with a density of 107–108 /cm2. Our newly developed fabrication process paves a way to fabricate graphene transistors all over large substrates including Si and glass.

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