MnO2/HF/HNO3/H2O System for High-Performance Texturization on Multi-Crystalline Silicon

2019 ◽  
Vol 960 ◽  
pp. 263-267
Author(s):  
Huan Liu ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
High Performance ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Etching Time ◽  
Component Ratio ◽  
Surface Reflectance ◽  
Simple Processing ◽  
Ratio Range ◽  
Etching System ◽  
Si Wafer

It was found that the addition of MnO2 particles into the HF/HNO3/H2O system could significantly improve the texturization etching performance on multi-crystalline silicon (mc-Si) wafer. For a wide component ratio range of HF/HNO3/H2O from HF-rich to HNO3-rich, by optimizing the MnO2 usage and the etching time, the addition of MnO2 particles always reduced the texture reflectance greatly. Low weighted average surface reflectance (Ra) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved on both the slurry wire sliced (SWS) mc-Si and the diamond wire sliced (DWS) mc-Si. Due to its excellent effect and simple processing, the MnO2/HF/HNO3/H2O etching system can be expected as a candidate for high-performance texturization on mc-Si wafer, especially on DWS mc-Si wafer.

The Effect of Reaction Time on Optical Trapping Nanostructure Formation on the Multi-Crystalline Silicon by Metal-Assisted Chemical Etching

2016 ◽  
Vol 703 ◽  
pp. 219-223
Author(s):  
Yu Ren Xiang ◽  
Chun Lan Zhou ◽  
Wen Jing Wang
Keyword(s):  
Reaction Time ◽  
Chemical Etching ◽  
Particle Deposition ◽  
Optical Trapping ◽  
Deposition Time ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Etching Time ◽  
Metal Assisted Chemical Etching

The surface texturing has been considered as an important process for the high-efficiency solar cell fabrication. A two-step metal-assisted chemical etching method was used to produce light trapping nanostructure on multi-crystalline silicon wafers. And the effect of the reaction time on the optical trapping properties of the nanostructures was investigated. Both the density and the size of Ag particles are highly dependent on the deposition time. The etching time instead of the Ag particle deposition time dominates the reflectance of the nanostructures when the etching time is above 30 s. The lowest spectrum-weighted average reflectance obtained in this study is about 9.2%.

NOHSO4/HF – A Novel Etching System for Crystalline Silicon

2007 ◽  
Vol 62 (11) ◽  
pp. 1411-1421 ◽  
Author(s):  
Sebastian Patzig ◽  
Gerhard Roewer ◽  
Edwin Kroke ◽  
Ingo över
Keyword(s):  
Gas Phase ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Etching Solution ◽  
Wide Range ◽  
Ft Ir ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching System

Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection Fourier transform infra-red), FT-IR, Raman and NMR spectroscopy, respectively. It was found that the resulting silicon surface is hydrogen-terminated. The gas phase contains predominantly SiF4, NO and N2O. Furthermore, NH4+ is produced in solution. The study has confirmed the crucial role of nitrosyl ions for isotropic wet chemical etching processes. The novel etching system is proposed as an effective new way for selective surface texturing of multi- and monocrystalline silicon. A high etching bath service lifetime, besides a low contamination of the etching solution with reaction products, provides ecological and economical advantages for the semiconductor and solar industry.

Silicon Micro-Fabrication Technologies for Micro-Filters

2010 ◽  
Vol 2010 (1) ◽  
pp. 000498-000504 ◽  
Author(s):  
Bivragh Majeed ◽  
Wim De Malsche ◽  
Lei Zhang ◽  
Paolo Fiorini ◽  
Deniz Sabuncuoglu Tezcan ◽  
...  
Keyword(s):  
High Performance ◽  
Detection System ◽  
Plate Height ◽  
Micro Fabrication ◽  
Deep Reactive Ion Etching ◽  
Biological Mixtures ◽  
Successful Separation ◽  
Ordered Array ◽  
Definition Of ◽  
Si Wafer

Silicon micro-fabrication techniques allow for the development of microfluidic systems with very accurate control of size and uniformity of structures. In this paper we report on the silicon fabrication process of micro-filters for versatile application in fluidics systems. Micro-filters are composed of an ordered array of pillars and supply channels. Depending on pillar pitch, they can be used for, e.g., electrophoresis, chromatography and purification of biological mixtures. In this paper we focus on high performance liquid chromatography. The process that we have developed for micropillar fabrication consists of defining first 1μm diameter pillars with an inter-pillar distance of 1μm or less in an oxide hard mask with a DUV stepper, stitching is used to form few cm long patterns across the 200mm wafers. Second, the supply channels are defined with 1× alignment lithography. After definition of supply channels, deep reactive ion etching of silicon is performed with an optimised recipe to etch submicron pillars and supply channels of 100μm wide at the same time. The simultaneous etch of both structures avoids complex lithography steps otherwise necessary to protect the pillars while etching the supply channels or vice versa as would be done conventionally. Wafers are then anodically bonded to 200mm Pyrex wafers in order to seal the channels. Pyrex wafer also allows the use of optical detection system. Feed through holes for accessing the supply channels are etched on the backside of Si wafer. Filter characterization has been performed: a plate height of 1μm was measured and successful separation of 3 coumarin dyes is achieved.

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

Production of high performance multi-crystalline silicon ingot by using composite nucleant

2020 ◽  
Vol 542 ◽  
pp. 125666 ◽  
Author(s):  
Qi Lei ◽  
Liang He ◽  
Senlin Rao ◽  
Changxin Tang ◽  
Liang Ming ◽  
...  
Keyword(s):  
High Performance ◽  
Crystalline Silicon ◽  
Silicon Ingot

scholarly journals A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 605 ◽  
Author(s):  
Yun Chen ◽  
Dachuang Shi ◽  
Yanhui Chen ◽  
Xun Chen ◽  
Jian Gao ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Silicon Nanowires ◽  
High Frequency ◽  
Low Cost ◽  
Etching Rate ◽  
Low Frequency ◽  
Etching Time ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Etching System

Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.

scholarly journals Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 563
Author(s):  
Toshiyuki Hamada ◽  
Shunsuke Masuda ◽  
Kazuki Nishida ◽  
Soma Yamamoto
Keyword(s):  
Silicon Nitride ◽  
Applied Voltage ◽  
Silicon Surface ◽  
Discharge Plasma ◽  
Crystalline Silicon ◽  
Surface Discharge ◽  
Etching Time ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Carrier Gas

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.

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