High-Temperature Ferromagnetism of Zn1-xMnxOy Thin Films Synthesized by Pulsed Laser Deposition

2020 ◽  
Vol 989 ◽  
pp. 215-220
Author(s):  
A.S. Kuz'mina ◽  
M.P. Kuz'min
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Behavior ◽  
Synthesis Conditions ◽  
Semiconductor Matrix ◽  
Crystallite Sizes

The paper discusses the findings of the study of the structural and magnetic properties of Zn1-xMnxOy thin films (x = 0-0.08), synthesized by pulsed laser deposition under different conditions. It has been discovered that during the doping, thin films remain single-phased and retain wurtzite structure (ZnO wurz), oriented along the direction (001). It has been determined that thin films obtained under the same synthesis conditions have similar crystallite sizes, which is confirmed by the substitution of Mn2+ ions with Zn2+ ions in the Zn O semiconductor matrix. It has been found that annealing of samples in the oxygen atmosphere increases the surface roughness from 1-3 nm to ~ 10 nm; the higher the concentration of manganese in Zn1-xMnxOy films is, the greater the value of Ra. It has been demonstrated that, at room temperature, all Zn1-xMnxOy thin films (x = 0-0.08) exhibit ferromagnetic behavior, which is more pronounced upon the increase in concentration of oxygen vacancies and manganese in the samples. It is assumed that two mechanisms explaining high-temperature ferromagnetism coexist in the films: the first one is determined by ferromagnetic exchange between Mn2+ cations by means of oxygen vacancies, the second one deals with super-exchange interaction between oxygen vacancies.

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Nanostructured LaFeO3 /Si Thin Films Grown by Pulsed Laser Deposition

2021 ◽  
Author(s):  
Mateusz Jędrusik ◽  
Christian Turquat ◽  
Łukasz Cieniek ◽  
Agnieszka Kopia ◽  
Christine Leroux
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Formula ◽  
Iron Deficient ◽  
Exposed Facets

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850°C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. Due to the shape of the termination, the same {110} facets are exposed. The LaFeO3 is iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.

Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

1992 ◽  
Vol 268 ◽  
Author(s):  
D.B. Fenner ◽  
O. Li ◽  
P.W. Morrison ◽  
J. Cosgrove ◽  
L. Lynds ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Narrow Band ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Wide Band ◽  
Compound Semiconductor ◽  
Laser Deposition ◽  
Epitaxial Thin Films

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

Annealing Effects on Electrical Properties and Defects of CaCu3Ti4O12 Thin Films Deposited by Pulsed Laser Deposition

2010 ◽  
Vol 1256 ◽  
Author(s):  
Guochu Deng ◽  
Paul Muralt
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Oxygen Vacancies ◽  
Dielectric Material ◽  
Pulsed Laser ◽  
Negative Temperature ◽  
Laser Deposition ◽  
High Concentration ◽  
Defect Levels

AbstractWe present a systematic study of semiconductor and dielectric properties as a function of annealing treatments at CCTO thin films deposited by pulsed laser deposition at 720 °C in 200 mTorr oxygen. The as-deposited thin film samples contain a high concentration of defects that contribute to the semiconductivity in the interior of grains. With increasing annealing temperature, the apparent dielectric constant decreases, and the resistance increases, both at a given temperature (e.g. room temperature). After annealing at 680oC, the semiconductivity was almost completely suppressed and CaCu3Ti4O12 behaved as a dielectric material. Knowing that oxygen vacancies are removed during annealing, one can infer that the dopant states are related to oxygen vacancies. A double plateau behavior in the dielectric constant vs temperature graph indicates that there are at least two defect levels in CaCu3Ti4O12 thin films. This was confirmed by simulating the capacitance response of a Schottky barrier containing two defect levels. Apart of the usual acceptor level, a trap at 500 meV from the valence band was identified. The finally achieved quasi intrinsic material exhibits a negative temperature dependency of the dielectric constant below 120 K.

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