scholarly journals Magnetostriction in Amorphous Co66Fe34 Microcantilevers Fabricated with Hydrogenated Amorphous Silicon

2020 ◽  
Vol 233 ◽  
pp. 05003
Author(s):  
B.M. Silveira ◽  
J.H. Belo ◽  
R. Pinto ◽  
J.A. Silva ◽  
T.D. Ferreira ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Amorphous Silicon ◽  
Physical Vapor Deposition ◽  
Experimental Configuration ◽  
Position Sensitive ◽  
Displacement Based ◽  
Optical Lever ◽  
Hydrogenated Amorphous ◽  
The Magnetic Field ◽  
Magnetostrictive Film

To study the magnetostriction of Co66Fe34 thin films, amorphous silicon microcantilevers were prepared by surface micromachining, and the 136 nm-thick magnetostrictive film was deposited by electron beam physical vapor deposition and patterned on top of the microcantilever structure. The magnetostriction of the Co66Fe34 films was confirmed by measuring the deflection of the cantilevers under a varying magnetic field, reaching displacements up to 8 nm. The configuration was simulated using COMSOL software, yielding a similar deflection behavior as a function of the magnetic field, with a film with a magneto strictive coefficient of λ S ~ 55 p.p.m. The experimental configuration uses a laser and a position sensitive detector to measure the displacement, based on an optical lever configuration, and a piezoelectric stage to calibrate the system.

The Dependence of ECR-CVD Processing Parameters on Deposition Uniformity of Hydrogenated Amorphous Silicon (a-Si:H) Films

2015 ◽  
Vol 656-657 ◽  
pp. 92-100
Author(s):  
Li Cheng Hu ◽  
Yong Shiang Li ◽  
Chien Chieh Lee ◽  
Jeng Yang Cheng ◽  
I Chen Chen ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Microwave Power ◽  
Hydrogenated Amorphous Silicon ◽  
Processing Parameters ◽  
High Deposition Rate ◽  
Working Pressure ◽  
Deposition Uniformity ◽  
Hydrogenated Amorphous

The uniformity improvement of high deposition rate in hydrogenated amorphous silicon (a-Si:H) film deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) is very essential for a large substrate in PV solar industry. In order to improve the uniformity in depositing thin film in large area, the auxiliary magnetic coils were designed and installed in ECR-CVD to modify the distribution of magnetic field. In addition, the dependence of the other ECR-CVD processing parameters such as resonance position, microwave power, working pressure, and substrate temperature were investigated. The results indicated that more uniform a-Si:H film could be obtained when working pressure was decreased. By using finite element analysis, it was found that location of turbo pump would impact gas flow field and this effect would become more significant at high pressure. Increasing microwave power, increasing horizontal gradient of the magnetic field to the substrate, and forming Cusp magnetic field could enhance ECR-CVD deposition uniformity greatly. However, the plasma location and substrate temperature were not major factors affecting a-Si:H film uniformity in ECR-CVD process. Finally, the optimal and the best 3.8% in uniformity could be achieved in 150mm diameter when the ratio of magnetic field strength at wafer edge to wafer center is 215%, working pressure is 1.5 mtorr, microwave power density is 4W/cm2, and substrate temperature is 180°C.

Position‐sensitive photodetector based on hydrogenated amorphous silicon p‐i‐n junctions

1987 ◽  
Vol 58 (2) ◽  
pp. 202-206 ◽  
Author(s):  
V. A. Chumak ◽  
M. Bertolotti ◽  
A. Ferrari ◽  
F. Bartoloni ◽  
F. Evangelisti
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Position Sensitive ◽  
Hydrogenated Amorphous

The magnetic field dependence of luminescence in plasma-deposited amorphous silicon

1978 ◽  
Vol 21 (11-12) ◽  
pp. 1461-1463 ◽  
Author(s):  
Robert A. Street ◽  
David K. Biegelsen ◽  
John C. Knights ◽  
Ching Tsang ◽  
Robert M. White
Keyword(s):  
Magnetic Field ◽  
Amorphous Silicon ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
The Magnetic Field

Hydrogenated amorphous silicon position sensitive detector

1985 ◽  
Vol 57 (10) ◽  
pp. 4778-4782 ◽  
Author(s):  
Satoshi Arimoto ◽  
Hidekazu Yamamoto ◽  
Hideo Ohno ◽  
Hideki Hasegawa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Position Sensitive ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors

2001 ◽  
Vol 664 ◽  
Author(s):  
H. ǵuas ◽  
P. Nunes ◽  
E. Fortunato ◽  
R. Silva ◽  
V. Silva ◽  
...  
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Good Sensitivity ◽  
Transparent Substrate ◽  
Frequent Failure ◽  
Position Sensitive ◽  
Short Circuits ◽  
Position Sensitive Detectors ◽  
Hydrogenated Amorphous

ABSTRACTIn this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/a-Si:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ͌ 2% and a good sensitivity tothe light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

Observing the galactic magnetic field

1967 ◽  
Vol 31 ◽  
pp. 375-380
Author(s):  
H. C. van de Hulst
Keyword(s):  
Magnetic Field ◽  
Fair Agreement ◽  
Solar Neighbourhood ◽  
Galactic Magnetic Field ◽  
The Magnetic Field

Various methods of observing the galactic magnetic field are reviewed, and their results summarized. There is fair agreement about the direction of the magnetic field in the solar neighbourhood:l= 50° to 80°; the strength of the field in the disk is of the order of 10-5gauss.

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