scholarly journals LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-303-C2-310 ◽  
Author(s):  
C. PIJOLAT ◽  
L. BRUNO ◽  
R. LALAUZE
2010 ◽  
Vol 145 (2) ◽  
pp. 788-793 ◽  
Author(s):  
Jun Zhao ◽  
Shuxi Wu ◽  
Jianqiao Liu ◽  
Huan Liu ◽  
Shuping Gong ◽  
...  

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.


2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document