PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-567-C4-570 ◽  
Author(s):  
H. M. Welsch ◽  
W. Fuhs ◽  
K. H. Greeb ◽  
H. Mell
Keyword(s):  
Type A ◽  
P Type

Photoelectrical and optical study of p-type a-Si:H used as a photoreceptor

1983 ◽  
Vol 59-60 ◽  
pp. 493-496 ◽  
Author(s):  
A. Tříska ◽  
I. Shimizu ◽  
J. Kočka ◽  
L. Tichý ◽  
M. Vaněček
Keyword(s):  
Type A ◽  
Optical Study ◽  
P Type

Thin Multi-Layered Photoreceptor Deposited From Disilane

1986 ◽  
Vol 70 ◽  
Author(s):  
S. Araki ◽  
H. Nou ◽  
H. Kamaji ◽  
K. Kiyota
Keyword(s):  
Glow Discharge ◽  
Surface Potential ◽  
Gaseous Mixture ◽  
Type A ◽  
Passivation Layer ◽  
Blocking Layer ◽  
Environmental Characteristics ◽  
P Type

ABSTRACTA thin multi-layered photoreceptor drum has been fabricated, using glow-discharge decomposition of disilane. The photoreceptor is thin(10 μm), but it is charged up sufficiently. The photoreceptor has three layers; the p-type a-Si:H (blocking layer), the intrinsic B-doped a-Si:H (photoconductive layer) and a-SiC:H (passivation layer). Disilane is highly reactive. The intrinsic B-doped a-Si:H was prepared from a slightly gaseous mixture of B2H6 (3 ppm). The amorphous-SiC:H passivation layer deposited from Si2H6 and C3H8 was developed to achieve sufficient surface potential and to improve the environmental characteristics.

Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge

1981 ◽  
Vol 20 (12) ◽  
pp. 2431-2432 ◽  
Author(s):  
Koshiro Mori ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao ◽  
Shinichiro Ishihara ◽  
Masaharu Ohno
Keyword(s):  
Type A ◽  
High Conductivity ◽  
P Type

Boron doping in a-SiO:H,

2014 ◽  
Vol 92 (7/8) ◽  
pp. 586-588 ◽  
Author(s):  
Y. Kitani ◽  
T. Maeda ◽  
S. Kakimoto ◽  
K. Tanaka ◽  
R. Okumoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Boron Doping ◽  
Type A ◽  
Dark Conductivity ◽  
Wide Range ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Oxygen

Boron-doping characteristics in hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility.

Temperature Dependence of the Photoconductivity in p-Type a—Si:H

1991 ◽  
Vol 168 (1) ◽  
pp. K19-K21 ◽  
Author(s):  
A. G. Kazanskii ◽  
S. V. Kuznetsov
Keyword(s):  
Temperature Dependence ◽  
Type A ◽  
P Type

scholarly journals p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 1600007 ◽  
Author(s):  
Tristan Carrere ◽  
Delfina Muñoz ◽  
Marianne Coig ◽  
Christophe Longeaud ◽  
Jean-Paul Kleider
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Type A ◽  
Heterojunction Solar Cell ◽  
Solar Cell Application ◽  
Silicon Heterojunction Solar Cell ◽  
Plasma Immersion Ion Implantation ◽  
P Type
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