Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si:H

2001 ◽  
Vol 35 (10) ◽  
pp. 1191-1196
Author(s):  
S. V. Kuznetsov
Keyword(s):  
Numerical Calculation ◽  
Type A ◽  
Temperature Dependences ◽  
P Type

PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-567-C4-570 ◽  
Author(s):  
H. M. Welsch ◽  
W. Fuhs ◽  
K. H. Greeb ◽  
H. Mell
Keyword(s):  
Type A ◽  
P Type

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Mark S. Rodder ◽  
Dimitri A. Antoniadis
Keyword(s):  
Numerical Calculation ◽  
Polycrystalline Silicon ◽  
Amorphous Region ◽  
Defect States ◽  
Temperature Dependent ◽  
Step Process ◽  
Dependent Potential ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Manganese-Doped CdGeAs2, ZnGeAs2 and ZnSiAs2 Chalcopyrites: A New Advanced Materials for Spintronics

2010 ◽  
Vol 168-169 ◽  
pp. 31-34 ◽  
Author(s):  
A.S. Morozov ◽  
L.A. Koroleva ◽  
D.M. Zashchirinskii ◽  
T.M. Khapaeva ◽  
S.F. Marenkin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Charge Carriers ◽  
Advanced Materials ◽  
Temperature Dependences ◽  
P Type ◽  
Mn Doped ◽  
Curie Temperatures ◽  
Exchange And Superexchange Interactions

Based on the Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2, new dilute magnetic semiconductors with the p-type conductivity were produced. Magnetization, electrical resistivity and Hall effect of these compositions were studied. Their temperature dependences of magnetization are similar in form in spite of a complicated character, which is controlled by the concentration and mobility of the charge carriers. Thus, for T < 15 K, these curves are characteristic of superparamagnets and for T > 15 K, of a frustrated ferromagnet. In compounds with Zn these two states are diluted by a spinglass-like state. This specific feature is ascribed to attraction of Mn ions occupying neighboring sites and to competition between the carrier-mediated exchange and superexchange interactions. The Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems.

Photoelectrical and optical study of p-type a-Si:H used as a photoreceptor

1983 ◽  
Vol 59-60 ◽  
pp. 493-496 ◽  
Author(s):  
A. Tříska ◽  
I. Shimizu ◽  
J. Kočka ◽  
L. Tichý ◽  
M. Vaněček
Keyword(s):  
Type A ◽  
Optical Study ◽  
P Type

Thin Multi-Layered Photoreceptor Deposited From Disilane

1986 ◽  
Vol 70 ◽  
Author(s):  
S. Araki ◽  
H. Nou ◽  
H. Kamaji ◽  
K. Kiyota
Keyword(s):  
Glow Discharge ◽  
Surface Potential ◽  
Gaseous Mixture ◽  
Type A ◽  
Passivation Layer ◽  
Blocking Layer ◽  
Environmental Characteristics ◽  
P Type

ABSTRACTA thin multi-layered photoreceptor drum has been fabricated, using glow-discharge decomposition of disilane. The photoreceptor is thin(10 μm), but it is charged up sufficiently. The photoreceptor has three layers; the p-type a-Si:H (blocking layer), the intrinsic B-doped a-Si:H (photoconductive layer) and a-SiC:H (passivation layer). Disilane is highly reactive. The intrinsic B-doped a-Si:H was prepared from a slightly gaseous mixture of B2H6 (3 ppm). The amorphous-SiC:H passivation layer deposited from Si2H6 and C3H8 was developed to achieve sufficient surface potential and to improve the environmental characteristics.

Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge

1981 ◽  
Vol 20 (12) ◽  
pp. 2431-2432 ◽  
Author(s):  
Koshiro Mori ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao ◽  
Shinichiro Ishihara ◽  
Masaharu Ohno
Keyword(s):  
Type A ◽  
High Conductivity ◽  
P Type

Boron doping in a-SiO:H,

2014 ◽  
Vol 92 (7/8) ◽  
pp. 586-588 ◽  
Author(s):  
Y. Kitani ◽  
T. Maeda ◽  
S. Kakimoto ◽  
K. Tanaka ◽  
R. Okumoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Boron Doping ◽  
Type A ◽  
Dark Conductivity ◽  
Wide Range ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Oxygen

Boron-doping characteristics in hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility.

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