Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy

1989 ◽  
Vol 54 (1) ◽  
pp. 48-50 ◽  
Author(s):  
J.‐P. Reithmaier ◽  
H. Cerva ◽  
R. Lösch
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Transmission Electron

Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy

2001 ◽  
Vol 34 (13) ◽  
pp. 1943-1946 ◽  
Author(s):  
M Moran ◽  
H Meidia ◽  
T Fleischmann ◽  
D J Norris ◽  
G J Rees ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Transmission Electron

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

2003 ◽  
Vol 240 (2) ◽  
pp. 297-300 ◽  
Author(s):  
T. M. Smeeton ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
M. E. Vickers ◽  
C. J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Single Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Ray Scattering
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