Comment on ‘‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy’’ [Appl. Phys. Lett.54, 48 (1989)]
1991 ◽
Vol 9
(1)
◽
pp. 123-126
◽
Keyword(s):
2001 ◽
Vol 34
(13)
◽
pp. 1943-1946
◽
2003 ◽
Vol 240
(2)
◽
pp. 297-300
◽
Keyword(s):
2003 ◽
Vol 247
(1-2)
◽
pp. 28-34
◽
2005 ◽
Vol 22
(10)
◽
pp. 2700-2703
◽