Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices

1989 ◽  
Vol 55 (5) ◽  
pp. 466-468 ◽  
Author(s):  
D. M. Fleetwood
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Oxide Trapped Charge ◽  
Trapped Charge

Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation

1998 ◽  
Vol 37 (Part 2, No. 8B) ◽  
pp. L1002-L1004 ◽  
Author(s):  
Takeshi Ohshima ◽  
Masahito Yoshikawa ◽  
Hisayoshi Itoh ◽  
Yasushi Aoki ◽  
Isamu Nashiyama
Keyword(s):  
Metal Oxide ◽  
Gamma Ray ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Gamma Ray Irradiation ◽  
Oxide Trapped Charge ◽  
Trapped Charge

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

1993 ◽  
Vol 73 (10) ◽  
pp. 5058-5074 ◽  
Author(s):  
D. M. Fleetwood ◽  
P. S. Winokur ◽  
R. A. Reber ◽  
T. L. Meisenheimer ◽  
J. R. Schwank ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Oxide Traps

scholarly journals A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

2021 ◽  
Vol 129 (5) ◽  
pp. 054501
Author(s):  
Jordan R. Nicholls ◽  
Arnar M. Vidarsson ◽  
Daniel Haasmann ◽  
Einar Ö. Sveinbjörnsson ◽  
Sima Dimitrijev
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps
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