Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.353777 ◽

1993 ◽

Vol 73 (10) ◽

pp. 5058-5074 ◽

Author(s):

D. M. Fleetwood ◽

P. S. Winokur ◽

R. A. Reber ◽

T. L. Meisenheimer ◽

J. R. Schwank ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

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Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.101854 ◽

1989 ◽

Vol 55 (5) ◽

pp. 466-468 ◽

Author(s):

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Oxide Trapped Charge ◽

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Formation of interface traps in metal‐oxide‐semiconductor devices during isochronal annealing after irradiation at 78 K

Journal of Applied Physics ◽

10.1063/1.349739 ◽

1991 ◽

Vol 70 (12) ◽

pp. 7434-7442 ◽

Author(s):

N. S. Saks ◽

R. B. Klein ◽

S. Yoon ◽

D. L. Griscom

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Isochronal Annealing ◽

Interface Traps

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Interface traps induced by hole trapping in metal-oxide semiconductor devices

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(95)00131-x ◽

1995 ◽

Vol 187 ◽

pp. 165-169 ◽

Author(s):

Y. Roh ◽

L. Trombetta ◽

D.J. DiMaria

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

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A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Journal of Applied Physics ◽

10.1063/5.0037744 ◽

2021 ◽

Vol 129 (5) ◽

pp. 054501

Author(s):

Jordan R. Nicholls ◽

Arnar M. Vidarsson ◽

Daniel Haasmann ◽

Einar Ö. Sveinbjörnsson ◽

Sima Dimitrijev

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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