Effect of buffer layers on low‐temperature growth of mirror‐like superconducting thin films on sapphire

1989 ◽  
Vol 55 (3) ◽  
pp. 295-297 ◽  
Author(s):  
S. Witanachchi ◽  
S. Patel ◽  
D. T. Shaw ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Buffer Layers ◽  
Superconducting Thin Films ◽  
Temperature Growth ◽  
Low Temperature Growth

Low-temperature growth of mirror-like superconducting thin films on sapphire

1989 ◽  
Vol 8 (1-2) ◽  
pp. 53-56 ◽  
Author(s):  
S. Witanachchi ◽  
S. Patel ◽  
D.T. Shaw ◽  
H.S. Kwok
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting Thin Films ◽  
Temperature Growth ◽  
Low Temperature Growth

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Irradiation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ultraviolet Light Irradiation ◽  
Deep Ultraviolet

Short-period (Si14 / Si0.75 Ge0.25)20 Superlattices for the Growth of High-quality Si0.75 Ge0.25

2003 ◽  
Vol 765 ◽  
Author(s):  
M.M. Rahman ◽  
T. Tambo ◽  
C. Tatsuyama
Keyword(s):  
Low Temperature ◽  
Alloy Layer ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Strained Layers ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Defect Sites ◽  
Short Period ◽  
Different Temperatures

AbstractIn the present experiment, we have grown 2500-Å thick Si0.75Ge0.25 alloy layers on Si(001) substrate by MBE process using a short-period (Si14/Si0.75Ge0.25)20 superlattice (SL) as buffer layers. In the SL layers, first a layer of 14 monolayers (MLs) of Si (thickness about 20Å) then a thin layer of Si0.75Ge0.25 (thickness 5-6Å) were grown. This Si/(Si0.75Ge0.25) bilayers were repeated for 20 times. The buffer layers were grown at different temperatures from 300-400°C and the alloy layers were then grown at 500°C on the buffer layers. The alloy layer showed low residual strain (about -0.16%) and smooth surface (rms roughness ~15Å) with 300°C grown SL buffer. Low temperature growth of Si in SL layer introduces point defects and low temperature growth of Si1-xGex in SL layer reduces the Ge segregation length, which leads to strained SL layer formation. Strained layers are capable to make barrier for the propagation of threading dislocations and point defect sites can trap the dislocations.

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