scholarly journals Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors

1990 ◽  
Vol 57 (14) ◽  
pp. 1422-1424 ◽  
Author(s):  
T. L. Lin ◽  
J. Maserjian
Keyword(s):  
Infrared Detectors ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

1991 ◽  
Vol 38 (5) ◽  
pp. 1141-1144 ◽  
Author(s):  
T.-L. Lin ◽  
A. Ksendzov ◽  
S.M. Dejewski ◽  
E.W. Jones ◽  
R.W. Fathaure ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

SiGe/Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors

1990 ◽  
Vol 216 ◽  
Author(s):  
T. L. Lin ◽  
A. Ksendzov ◽  
S. M. Dejewski ◽  
E. W. Jones ◽  
R. W. Fathauer ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Molecular Beam ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Indium Bump ◽  
Good Uniformity ◽  
Easy Integration ◽  
Long Wavelength Infrared

There is a great need of long-wavelength (8-17μm) infrared (LWIR) focal plane arrays (FPAs) for a variety of space and defense applications. Si-based infrared detectors offers several important advantages, including good uniformity, low cost, and easy integration with Si readout circuitry either monolithically or by indium bump bonding to form large arrays. We report here a novel SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector fabricated by molecular beam epitaxy [1].

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

HgCdTe/Si materials for long wavelength infrared detectors

2004 ◽  
Vol 33 (6) ◽  
pp. 526-530 ◽  
Author(s):  
S. M. Johnson ◽  
A. A. Buell ◽  
M. F. Vilela ◽  
J. M. Peterson ◽  
J. B. Varesi ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Long Wavelength Infrared

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

2018 ◽  
Vol 90 ◽  
pp. 110-114 ◽  
Author(s):  
Min Huang ◽  
Jianxin Chen ◽  
Jiajia Xu ◽  
Fangfang Wang ◽  
Zhicheng Xu ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Icp Etching ◽  
Long Wavelength Infrared

Long‐wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers

1994 ◽  
Vol 64 (18) ◽  
pp. 2370-2372 ◽  
Author(s):  
J. S. Park ◽  
T. L. Lin ◽  
E. W. Jones ◽  
H. M. Del Castillo ◽  
S. D. Gunapala
Keyword(s):  
Infrared Detectors ◽  
Internal Photoemission ◽  
Long Wavelength
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