Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy
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1997 ◽
Vol 36
(Part 2, No. 6A)
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pp. L703-L704
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2000 ◽
Vol 208
(1-4)
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pp. 322-326
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1998 ◽
Vol 193
(4)
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pp. 535-540
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2007 ◽
Vol 307
(1)
◽
pp. 30-34
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1994 ◽
Vol 144
(3-4)
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pp. 157-172
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