scholarly journals Low temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (5) ◽  
pp. 573-574 ◽  
Author(s):  
J. P. Silveira ◽  
F. Briones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

1998 ◽  
Vol 193 (4) ◽  
pp. 535-540 ◽  
Author(s):  
J.P. Liu ◽  
M.Y. Kong ◽  
J.P. Li ◽  
X.F. Liu ◽  
D.D. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Growth Properties

Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy

1987 ◽  
Author(s):  
Shin Yokoyama ◽  
Dai Yui ◽  
Takashi Shiraishi ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gaas On Si

Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 2, No. 9) ◽  
pp. L1585-L1587 ◽  
Author(s):  
Takashi Fukada ◽  
Nobuo Matsumura ◽  
Yasumori Fukushima ◽  
Junji Saraie
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth
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