A low-temperature growth process of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam-epitaxy (ECR-MBE)

Mapping Intimacies ◽

10.1063/1.37162 ◽

1988 ◽

Author(s):

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Cyclotron Resonance ◽

Growth Process ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Temperature Growth ◽

Low Temperature Growth ◽

Resonance Plasma

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Low temperature growth of fluorinated oxides using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

10.31274/rtd-20210128-16 ◽

2001 ◽

Author(s):

Roger Graham Keen

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Temperature Growth ◽

Low Temperature Growth ◽

Resonance Plasma

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Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00802-9 ◽

2002 ◽

Vol 89 (1-3) ◽

pp. 296-302 ◽

Author(s):

J.-M Baribeau ◽

D.J Lockwood ◽

J Balle ◽

S.J Rolfe ◽

G.I Sproule

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment

Review of Scientific Instruments ◽

10.1063/1.1141371 ◽

1990 ◽

Vol 61 (9) ◽

pp. 2407-2411 ◽

Author(s):

Z. Sitar ◽

M. J. Paisley ◽

D. K. Smith ◽

R. F. Davis

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

And Performance ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02653074 ◽

1995 ◽

Vol 24 (9) ◽

pp. 1201-1206 ◽

Author(s):

K. A. Harris ◽

D. W. Endres ◽

R. W. Yanka ◽

L. M. Mohnkern ◽

A. R. Reisinger ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Passivation of GaAs(110) with Ga2O3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.1497455 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2330-2334 ◽

Author(s):

D. Kim ◽

G. Chen ◽

X. Y. Mei ◽

H. E. Ruda

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Structural Dependence of GaN/Al2O3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l700 ◽

1998 ◽

Vol 37 (Part 2, No. 6B) ◽

pp. L700-L702 ◽

Author(s):

Yuui Shimizu ◽

Tatsuya Tominari ◽

Shingo Hokuto ◽

Yasuo Chiba ◽

Yasushi Nanishi

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Structural Dependence ◽

Resonance Plasma

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Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.341600 ◽

1988 ◽

Vol 64 (5) ◽

pp. 2778-2780 ◽

Author(s):

Yoshimitsu Tanaka ◽

Yasuhiro Kunitsugu ◽

Ikuo Suemune ◽

Yoshiaki Honda ◽

Yasuo Kan ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Epitaxial Growth ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Metalorganic Molecular Beam Epitaxy ◽

Low Temperature Gaas

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Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/s0040-6090(00)01628-x ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 172-177 ◽

Author(s):

A.J. Flewitt ◽

A.P. Dyson ◽

J. Robertson ◽

W.I. Milne

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Temperature Growth ◽

Resonance Plasma

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Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587052 ◽

1994 ◽

Vol 12 (2) ◽

pp. 1232 ◽

Author(s):

R. P. Vaudo

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Atomic Nitrogen ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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