A low-temperature growth process of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam-epitaxy (ECR-MBE)

1988 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Cyclotron Resonance ◽  
Growth Process ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Resonance Plasma

Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1201-1206 ◽  
Author(s):  
K. A. Harris ◽  
D. W. Endres ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
A. R. Reisinger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy

1988 ◽  
Vol 64 (5) ◽  
pp. 2778-2780 ◽  
Author(s):  
Yoshimitsu Tanaka ◽  
Yasuhiro Kunitsugu ◽  
Ikuo Suemune ◽  
Yoshiaki Honda ◽  
Yasuo Kan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Low Temperature Gaas
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