Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

2001 ◽  
Vol 707 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pan ◽  
E. Towe

ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.


2008 ◽  
Vol 1 ◽  
pp. 061202 ◽  
Author(s):  
Masato Ohmori ◽  
Takuya Kawazu ◽  
Kousuke Torii ◽  
Takuji Takahashi ◽  
Hiroyuki Sakaki

2005 ◽  
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pp. 72-76 ◽  
Author(s):  
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S.J. Chua ◽  
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S. Tripathy

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pp. 3556-3559 ◽  
Author(s):  
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Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
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pp. 335102 ◽  
Author(s):  
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Wang Hai-Li ◽  
Shang Xiang-Jun ◽  
Li Mi-Feng ◽  
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N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
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...  

2000 ◽  
Vol 216 (1-4) ◽  
pp. 57-61 ◽  
Author(s):  
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S.F Yoon ◽  
H.Q Zheng ◽  
K.H Yuan

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