Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well
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ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.
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2005 ◽
Vol 276
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pp. 72-76
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2006 ◽
Vol 45
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pp. 3556-3559
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2011 ◽
Vol 44
(33)
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pp. 335102
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2009 ◽
Vol 26
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pp. 067801
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2002 ◽
Vol 20
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pp. 762
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2000 ◽
Vol 216
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pp. 57-61
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