Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures

ABSTRACTWe report for the first time the results of structural and optical characterizations performed on Mercury Cadmium Telluride (MCT) grown simultaneously by Molecular Beam Epitaxy (MBE) on (11 1)B 4°misoriented and (211)B CdZnTe substrates. These two Te-terminated surfaces differ only by the density and the nature of their surface steps. In MBE conditions we do not observe any difference of incorporation between the two orientations at low growth temperatures and only a slight difference in Te and Hg incorporations above 200°C. This study confirms that the growth mode is essentially the same on both orientations and the growth proceeds by step-flow. The higher step density on (211) surfaces allows broader tolerances on the substrate temperature for the growth of twin-free material. It also leads to higher crystalline quality for the lowest temperatures. These observations have been confirmed by magneto-absorption experiments on superlattices grown simultaneously on both orientations.

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Gallium Nitride Epitaxy on Silicon: Importance of Substrate Preparation

MRS Proceedings ◽

10.1557/proc-395-67 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 3

Author(s):

G. A. Martin ◽

B. N. Sverdlov ◽

A. Botchkarev ◽

H. Morkoç ◽

D. J. Smith ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Substrate Surface ◽

Substrate Preparation ◽

Rocking Curve ◽

X Ray ◽

Surface Steps ◽

Threading Defects ◽

Atomically Flat

ABSTRACTHexagonal GaN films grown on non-isomorphic substrates are usually characterized by numerous threading defects which are essentially boundaries between wurtzite GaN domains where the stacking sequences do not align. One origin of these defects is irregularities on the substrate surface such as surface steps. Using Si <111> substrates and a substrate preparation procedure that makes wide atomically flat terraces, we demonstrate that reduction of these irregularities greatly improves the crystalline and luminescent quality of GaN films grown by plasma-enhanced molecular beam epitaxy. X-ray rocking curve width decreases from over 1 degree to less than 20 minutes, while PL halfwidth decreases from over 15 meV to less than 10 meV.

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The Effect Of Surface Stoichiometry On The Initial Stages Of Heteroepitaxy Of II-VI Compounds Grown On (001)GaAs By Molecular Beam Epitaxy

10.1117/12.947350 ◽

1988 ◽

Cited By ~ 2

Author(s):

Takafumi Yao ◽

Masami Fujimoto ◽

Hiroshi Nakao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Effect Of Surface

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Domain formation due to surface steps in topological insulator Bi2Te3 thin films grown on Si (111) by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4818456 ◽

2013 ◽

Vol 103 (8) ◽

pp. 081902 ◽

Cited By ~ 13

Author(s):

S. Borisova ◽

J. Kampmeier ◽

M. Luysberg ◽

G. Mussler ◽

D. Grützmacher

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Topological Insulator ◽

Molecular Beam ◽

Domain Formation ◽

Surface Steps

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Observation of “Ghost” Islands and Surfactant Effect of Surface Gallium Atoms during GaN Growth by Molecular Beam Epitaxy

Physical Review Letters ◽

10.1103/physrevlett.85.2352 ◽

2000 ◽

Vol 85 (11) ◽

pp. 2352-2355 ◽

Cited By ~ 21

Author(s):

L. X. Zheng ◽

M. H. Xie ◽

S. M. Seutter ◽

S. H. Cheung ◽

S. Y. Tong

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surfactant Effect ◽

Effect Of Surface

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Surface Reconstruction of MBE-Grown GeXSi1−x on Si(111)

MRS Proceedings ◽

10.1557/proc-102-425 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

C. F. Huang ◽

R. P. G. Karunasiri ◽

J. S. Park ◽

K. L. Wang ◽

T. W. Kang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Raman Scattering ◽

Surface Reconstruction ◽

Molecular Beam ◽

Critical Thickness ◽

High Energy ◽

High Energy Electron ◽

Mbe Growth ◽

Strain Layer

ABSTRACTSurface reconstruction during the molecular beam epitaxy (MBE) growth of GexSi1−x ( x = 0.2 - 1.0 ) film on Si(111) was studied using reflection high energy electron diffraction (RHEED). A series of reconstruction pattern transitions was observed due to the formation of strain layer and its relaxation. The critical thickness obtained using the thickness of the GexSil-x film at the transition of the reconstruction pattern agrees well with the previously reported values. The strain dependence of RHEED patterns for GexSi1−x film was substantiated by Raman scattering.

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