High-Performance Polycrystalline Silicon Thin-Film Transistors with Two-Dimensional Location Control of the Grain Boundary via Excimer Laser Crystallization

2012 ◽  
Vol 12 (7) ◽  
pp. 5505-5509 ◽  
Author(s):  
Chao-Lung Wang ◽  
I.-Che Lee ◽  
Chun-Yu Wu ◽  
Chan-Yu Liao ◽  
Yu-Ting Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Two Dimensional ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Crystallization

Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization

1997 ◽  
Vol 71 (5) ◽  
pp. 578-580 ◽  
Author(s):  
R. Carluccio ◽  
A. Corradetti ◽  
G. Fortunato ◽  
C. Reita ◽  
P. Legagneux ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Crystallization

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Recessed Channel

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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