Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


2013 ◽  
Vol 124 (5) ◽  
pp. 895-897
Author(s):  
J. Kutrowska ◽  
P. Bugajny ◽  
M. Baranowski ◽  
L. Bryja ◽  
M. Syperek ◽  
...  

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

2001 ◽  
Vol 64 (24) ◽  
Author(s):  
C. K. Choi ◽  
Y. H. Kwon ◽  
B. D. Little ◽  
G. H. Gainer ◽  
J. J. Song ◽  
...  

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