Time-resolved photoluminescence ofInxGa1−xN/GaNmultiple quantum well structures: Effect of Si doping in the barriers

2001 ◽  
Vol 64 (24) ◽  
Author(s):  
C. K. Choi ◽  
Y. H. Kwon ◽  
B. D. Little ◽  
G. H. Gainer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Si Doping ◽  
Time Resolved Photoluminescence

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence

Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence

2012 ◽  
Vol 60 (11) ◽  
pp. 1934-1938 ◽  
Author(s):  
Hyunsung Kim ◽  
Dong-Pyo Han ◽  
Ji-Yeon Oh ◽  
Jong-In Shim ◽  
Dong-Soo Shin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence
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