Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

1998 ◽  
Vol 72 (8) ◽  
pp. 936-938 ◽  
Author(s):  
X. B. Li ◽  
D. Z. Sun ◽  
J. P. Zhang ◽  
M. Y. Kong ◽  
S. F. Yoon
2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.


1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas

1994 ◽  
Vol 136 (1-4) ◽  
pp. 310-314 ◽  
Author(s):  
S.G. Kim ◽  
H. Asahi ◽  
M. Seta ◽  
K. Asami ◽  
S. Gonda ◽  
...  

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