High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films

2001 ◽  
Vol 78 (7) ◽  
pp. 973-975 ◽  
Author(s):  
X. H. Zhu ◽  
A. D. Li ◽  
D. Wu ◽  
T. Zhu ◽  
Z. G. Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Ferroelectric Thin Films ◽  
Resolution Electron

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Recent studies of thin films and surfaces by high-Resolution electron microscopy

1992 ◽  
Vol 23 (4) ◽  
pp. 1063-1070
Author(s):  
David J. Smith ◽  
Rob W. Glaisher ◽  
Z. G. Li ◽  
Ping Lu ◽  
M. R. McCartney ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron

High-resolution electron microscopy study of SiGeC thin films grown on Si(100) by laser-assisted techniques

2006 ◽  
Vol 252 (13) ◽  
pp. 4527-4530
Author(s):  
Ch.B. Lioutas ◽  
N. Frangis ◽  
S. Soumelidis ◽  
S. Chiussi ◽  
E. López ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Electron

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

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