Micromagnetic studies of high frequency permeability in Fe–M–N thin films with macroscopic and mesoscopic sizes

2001 ◽  
Vol 90 (6) ◽  
pp. 2919-2923 ◽  
Author(s):  
Dan Wei ◽  
Fu-lin Wei ◽  
Zheng Yang
Keyword(s):  
2019 ◽  
pp. 20-25
Author(s):  
Anna Chlenova ◽  
◽  
Elizaveta Golubeva ◽  
Iuliia Novoselova ◽  
Ruslan Salikhov ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3360
Author(s):  
Yakir Dahan ◽  
Eldad Holdengreber ◽  
Elichai Glassner ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
...  

A new measurement technique of electrical parameters of superconducting thin films at the Very High Frequency (VHF) range is described, based on resonators with microstrip (MS) structures. The design of an optimal resonator was achieved, based on a thorough theoretical analysis, which is required for derivation of the exact configuration of the MS. A theoretical model is presented, from which an expression for the attenuation of a MS line can be derived. Accordingly, simulations were performed, and an optimal resonator for the VHF range was designed and implemented. Production constraints of YBa2Cu3O7 (YBCO) limited the diameter of the sapphire substrate to 3″. Therefore, a meander configuration was formed to fit the long λ/4 MS line on the wafer. By measuring the complex input reflection coefficients of a λ/4 resonator, we extracted the quality factor, which is mainly affected by the dielectric and conductor attenuations. The experimental results are well fitted by the theoretical model. The dielectric attenuation was calculated using the quasi-static analysis of the MS line. An identical copper resonator was produced and measured to compare the properties of the YBCO resonator in reference to the copper one. A quality factor of ~6·105 was calculated for the YBCO resonator, three orders of magnitude larger than that of the copper resonator. The attenuation per unit length of the YBCO layer was smaller by more than five orders of magnitude than that of the copper.


2019 ◽  
Vol 669 ◽  
pp. 520-524
Author(s):  
Baptiste Bérenguier ◽  
Nicolas Barreau ◽  
Alexandre Jaffre ◽  
Daniel Ory ◽  
Jean-François Guillemoles ◽  
...  

2018 ◽  
Vol 66 (4) ◽  
Author(s):  
Thomas Cristiani ◽  
Nicholas Cadirov ◽  
Matthew Ehrman ◽  
Kai Kristiansen ◽  
Jeffrey Scott ◽  
...  

2020 ◽  
Vol 31 (15) ◽  
pp. 12101-12108
Author(s):  
Hai Liu ◽  
Zhong Yu ◽  
Chuanjian Wu ◽  
Xiaona Jiang ◽  
Rongdi Guo ◽  
...  

1999 ◽  
Vol 23 (4−2) ◽  
pp. 1389-1392
Author(s):  
S. Matsumura ◽  
T. Sato ◽  
K. Yamasawa ◽  
Y. Sasaki ◽  
T. Hatanai ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.


2002 ◽  
Author(s):  
Alfred Ludwig ◽  
Michael Frommberger ◽  
Christel Zanke ◽  
Stefan Glasmachers ◽  
Eckhard Quandt
Keyword(s):  

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