High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

2002 ◽  
Vol 92 (7) ◽  
pp. 3755-3760 ◽  
Author(s):  
J. H. Evans-Freeman ◽  
P. Y. Y. Kan ◽  
N. Abdelgader
Keyword(s):  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies ◽  
Ion Implanted

High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN

2008 ◽  
Vol 5 (6) ◽  
pp. 1482-1484 ◽  
Author(s):  
D. Emiroglu ◽  
J. Evans-Freeman ◽  
M. J. Kappers ◽  
C. McAleese ◽  
C. J. Humphreys
Keyword(s):  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies ◽  
Electron And Hole Traps

High-resolution deep-level transient spectroscopy studies of gold and platinum acceptor states in diluted SiGe alloys

2001 ◽  
Vol 63 (23) ◽  
Author(s):  
K. Gościński ◽  
L. Dobaczewski ◽  
K. Bonde Nielsen ◽  
A. Nylandsted Larsen ◽  
A. R. Peaker
Keyword(s):  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

The deep level transient spectroscopy studies of a ZnO varistor as a function of annealing

1988 ◽  
Vol 63 (11) ◽  
pp. 5375-5379 ◽  
Author(s):  
A. Rohatgi ◽  
S. K. Pang ◽  
T. K. Gupta ◽  
W. D. Straub
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Zno Varistor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies
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