Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

2002 ◽  
Vol 92 (9) ◽  
pp. 5177-5182 ◽  
Author(s):  
R. Gago ◽  
I. Jiménez ◽  
F. Agulló-Rueda ◽  
J. M Albella ◽  
Zs. Czigány ◽  
...  
2009 ◽  
Vol 1204 ◽  
Author(s):  
Ruqiang Bao ◽  
Zijie Yan ◽  
Douglas B. Chrisey

AbstractBoron carbon nitride (B-C-N) thin films are attractive due to their potential as hard coatings and as semiconductors with varying band gap. Both B-C-N (BC0.24N0.24) thin films and boron carbide (B4C) thin films were deposited by radio-frequency magnetron sputtering at room temperature. Also, the transition of boron carbide to B-C-N was studied by bombarding the boron carbide thin film by ∼1 uA/cm2 4 keV N+ ions. The results show that the UV-Vis transmittance of B-C-N thin films is better than that of amorphous boron carbide and both B-C and B-N bonds exist in our B-C-N thin films. The nitrogen in our B-C-N thin films bonded with boron causes the XPS B 1s core level to shift 2 eV from that in the B4C boron carbide thin film. Ion bombardment shows that the N+ ion primarily reacts with boron to form B-N and this reaction causes the environmental change of carbon in the thin film and then the XPS C 1s core level to shift to 283.5 eV from 282.8 eV.


2018 ◽  
Vol 2 (1) ◽  
pp. 79-93 ◽  
Author(s):  
Moustafa M. Zagho ◽  
Hana D. Dawoud ◽  
Nasr Bensalah ◽  
T. M. Altahtamouni

2020 ◽  
Vol 142 (49) ◽  
pp. 20883-20891
Author(s):  
Paolo Giusto ◽  
Hiroki Arazoe ◽  
Daniel Cruz ◽  
Paola Lova ◽  
Tobias Heil ◽  
...  

2004 ◽  
Vol 84 (14) ◽  
pp. 2676-2678 ◽  
Author(s):  
C. L. Li ◽  
B. R. Huang ◽  
S. Chattopadhyay ◽  
K. H. Chen ◽  
L. C. Chen

Sign in / Sign up

Export Citation Format

Share Document