Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

2002 ◽  
Vol 81 (16) ◽  
pp. 3073-3075 ◽  
Author(s):  
S. Arulkumaran ◽  
T. Egawa ◽  
H. Ishikawa ◽  
T. Jimbo
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

scholarly journals Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125231
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

2001 ◽  
Vol 37 (10) ◽  
pp. 661 ◽  
Author(s):  
P.B. Klein ◽  
S.C. Binari ◽  
K. Ikossi-Anastasiou ◽  
A.E. Wickenden ◽  
D.D. Koleske ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse
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