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Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
Semiconductor Science and Technology
◽
10.1088/0268-1242/21/6/012
◽
2006
◽
Vol 21
(6)
◽
pp. 781-785
◽
Cited By ~ 7
Author(s):
Dong-Hai Huang
◽
Wei-Chou Hsu
◽
Yu-Shyan Lin
◽
Yue-Huei Wu
◽
Rong-Tay Hsu
◽
...
Keyword(s):
Comparative Study
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
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Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO 2 Gate Insulator on Si Substrates
physica status solidi (a)
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2020
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Vol 217
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Author(s):
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Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode
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Electron Mobility
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Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
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10.1063/1.1512820
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◽
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◽
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◽
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