Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

2002 ◽  
Vol 81 (16) ◽  
pp. 2950-2952 ◽  
Author(s):  
S. Pereira ◽  
E. Pereira ◽  
E. Alves ◽  
N. P. Barradas ◽  
K. P. O’Donnell ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Depth Profiling ◽  
Rutherford Backscattering ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Persistent photocurrent effects in GaN/AlGaN multiquantum wells

2001 ◽  
Vol 680 ◽  
Author(s):  
A. Bonfiglio ◽  
G. Traetta ◽  
M. Lomascolo ◽  
A. Passaseo ◽  
R. Cingolani
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Yellow Band ◽  
Carrier Trapping ◽  
Decay Times

ABSTRACTPhotoCurrent (PC) experiments on GaN/AlGaN multiple quantum wells, both spectrally and temporally resolved, have shown that a photopersistence effect exists in our samples even at room temperature. A peak in the rise and decay times of PC vs. time appears in correspondence of wavelengths typical of Yellow-Band features while this is not seen in PL. This fact seems to indicate that YB defects give rise here to carrier trapping rather than recombination. Furthermore, the observed persistence times seem to be peculiar of MultiQuantum Wells and this possibly calls into play the role of built-in fields in the defects dynamics.

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

2002 ◽  
Vol 743 ◽  
Author(s):  
E. Kuokstis ◽  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Subsequent Increase ◽  
Vapor Deposition Technique ◽  
Strong Excitation ◽  
Pl Intensity ◽  
The Comparative Study

ABSTRACTThe comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1100]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2–1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells

1998 ◽  
Vol 72 (12) ◽  
pp. 1463-1465 ◽  
Author(s):  
W. Feng ◽  
Y. Wang ◽  
J. Wang ◽  
W. K. Ge ◽  
Q. Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Recombination

scholarly journals Role of the Thermal Stress on the Magnetophonon Peak Structure in the Parallel Transport of the GaAs/AlGaAs Multiple Quantum Wells

1998 ◽  
Vol 94 (3) ◽  
pp. 597-602 ◽  
Author(s):  
G. Tomaka ◽  
J. Cebulski ◽  
E.M. Sheregii ◽  
W. Ściuk ◽  
W. Strupiński ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Quantum Wells ◽  
Parallel Transport ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Peak Structure

Magneto-optical study of excitonic binding energies, band offsets, and the role of interface potentials in CdTe/Cd1−xMnxTe multiple quantum wells

1994 ◽  
Vol 50 (8) ◽  
pp. 5392-5403 ◽  
Author(s):  
S. R. Jackson ◽  
J. E. Nicholls ◽  
W. E. Hagston ◽  
P. Harrison ◽  
T. Stirner ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Binding Energies ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Study ◽  
Band Offsets

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study
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