The role of Schottky barriers on the behavior of carbon nanotube field-effect transistors

Author(s):  
Ph. Avouris
2006 ◽  
Vol 963 ◽  
Author(s):  
Damien Casterman ◽  
Merlyne Maria De Souza

ABSTRACTThe role of the p-type chemical dopant, SbCl6, on Palladium (Pd)-contacted carbon nanotube field effect transistors (CNTFETs) is investigated using ab initio calculations. The interaction of SbCl6 with Pd leads to the chemisorption of one chlorine atom (Cl) which separates off from the rest of the molecule leaving behind a rehybridized SbCl5 molecule. This interaction increases the local workfunction by 0.08 eV. The interaction of the molecule with the carbon nanotube (CNT) itself results in the physisorption of SbCl6 onto CNT. The SbCl6 is found to degenerately dope CNT p-type and shifts the local potential by 0.29 eV. These barriers are useful for modelling of transport of Schottky barrier CNTFETs.


Nano Letters ◽  
2005 ◽  
Vol 5 (7) ◽  
pp. 1497-1502 ◽  
Author(s):  
Zhihong Chen ◽  
Joerg Appenzeller ◽  
Joachim Knoch ◽  
Yu-ming Lin ◽  
Phaedon Avouris

2001 ◽  
Vol 706 ◽  
Author(s):  
Marcus Freitag ◽  
A. T. Johnson

AbstractWe use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky barriers at the metal contacts, one of which is forward, and one of which is reverse biased. The gating action is only observed at the reverse biased Schottky barrier at the positive electrode. By positioning the gate near one of the contacts, we convert the nanotube field-effect transistor into a rectifying nanotube diode. These experiments both clarify the gating mechanism for nanotube devices and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities at a nanotube field-effect transistor.


Biosensors ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 24
Author(s):  
Agnes Purwidyantri ◽  
Telma Domingues ◽  
Jérôme Borme ◽  
Joana Rafaela Guerreiro ◽  
Andrey Ipatov ◽  
...  

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performance of the GFETs. However, beyond the Debye length (λD), the role of the graphene-electrolytes’ ionic species interactions on the DNA behavior at the nanoscale interface is complicated. We studied the characteristics of the GFETs under different ionic strength, pH, and electrolyte type, e.g., phosphate buffer (PB), and phosphate buffer saline (PBS), in an automatic portable built-in system. The electrostatic gating and charge transfer phenomena were inferred from the field-effect measurements of the Dirac point position in single-layer graphene (SLG) transistors transfer curves. Results denote that λD is not the main factor governing the effective nanoscale screening environment. We observed that the longer λD was not the determining characteristic for sensitivity increment and limit of detection (LoD) as demonstrated by different types and ionic strengths of measuring buffers. In the DNA hybridization study, our findings show the role of the additional salts present in PBS, as compared to PB, in increasing graphene electron mobility, electrostatic shielding, intermolecular forces and DNA adsorption kinetics leading to an improved sensitivity.


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