Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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High-efficiency organic light-emitting diodes with tunable light emission by using aromatic diamine/5,6,11,12-tetraphenylnaphthacene multiple quantum wells

Applied Physics Letters ◽

10.1063/1.1519348 ◽

2002 ◽

Vol 81 (19) ◽

pp. 3540-3542 ◽

Cited By ~ 63

Author(s):

Yong Qiu ◽

Yudi Gao ◽

Liduo Wang ◽

Peng Wei ◽

Lian Duan ◽

...

Keyword(s):

Quantum Wells ◽

High Efficiency ◽

Light Emitting Diodes ◽

Light Emission ◽

Organic Light Emitting Diodes ◽

Multiple Quantum Wells ◽

Aromatic Diamine ◽

Multiple Quantum ◽

Light Emitting ◽

Organic Light

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Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Applied Physics Letters ◽

10.1063/1.1410362 ◽

2001 ◽

Vol 79 (16) ◽

pp. 2594-2596 ◽

Cited By ~ 58

Author(s):

H. K. Cho ◽

J. Y. Lee ◽

N. Sharma ◽

C. J. Humphreys ◽

G. M. Yang ◽

...

Keyword(s):

Quantum Wells ◽

Light Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

MRS Proceedings ◽

10.1557/opl.2012.1136 ◽

2012 ◽

Vol 1432 ◽

Author(s):

Chiao-Yun Chang ◽

Huei-Min Huang ◽

Tien-Chang Lu ◽

Hao-Chung Kuo ◽

Shing-Chung Wang ◽

...

Keyword(s):

Quantum Wells ◽

Light Emission ◽

Quantum Confinement Effect ◽

Polarized Light ◽

Peak Position ◽

Multiple Quantum Wells ◽

Experimental Result ◽

Multiple Quantum ◽

Polarization Ratio ◽

Quantum Well Width

ABSTRACTWe studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

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