Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

ABSTRACTWe studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

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Characteristics of Polarized Light Emission in $a$-Plane GaN-Based Multiple Quantum Wells

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2012.2191140 ◽

2012 ◽

Vol 48 (7) ◽

pp. 867-871 ◽

Cited By ~ 2

Author(s):

Chiao-Yun Chang ◽

Huei-Min Huang ◽

Chih Ming Lai ◽

Tien-Chang Lu

Keyword(s):

Quantum Wells ◽

Light Emission ◽

Polarized Light ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.480-481.629 ◽

2011 ◽

Vol 480-481 ◽

pp. 629-633

Author(s):

Wen Teng Chang ◽

Yu Ting Chen ◽

Chung Chin Kuo

Keyword(s):

Silicon Carbide ◽

Quantum Wells ◽

Quantum Confinement Effect ◽

Chemical Vapor ◽

Blue Shift ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Plasma Chemical ◽

Hydrogenated Silicon ◽

Plasma Chemical Vapor Deposition

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

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Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

Applied Physics Letters ◽

10.1063/1.1515887 ◽

2002 ◽

Vol 81 (16) ◽

pp. 3102-3103 ◽

Cited By ~ 2

Author(s):

H. K. Cho ◽

J. Y. Lee ◽

N. Sharma ◽

C. J. Humphreys ◽

G. M. Yang ◽

...

Keyword(s):

Quantum Wells ◽

Light Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Valence intersubband transitions stimulated by polarized light in Si1−xGex/Si multiple quantum wells

Journal of Applied Physics ◽

10.1063/1.362927 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1287-1290 ◽

Cited By ~ 1

Author(s):

Xinhui Zhang ◽

Zhenghao Chen ◽

Dafu Cui ◽

Junming Zhou ◽

Guozhen Yang

Keyword(s):

Quantum Wells ◽

Polarized Light ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Transitions

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Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect‐gap (Al0.49Ga0.51As) confining layers

Applied Physics Letters ◽

10.1063/1.102998 ◽

1990 ◽

Vol 56 (20) ◽

pp. 1998-2000 ◽

Cited By ~ 2

Author(s):

J. H. Lee ◽

K. Y. Hsieh ◽

Y. L. Hwang ◽

R. M. Kolbas

Keyword(s):

Visible Light ◽

Quantum Wells ◽

Light Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Confining Layers ◽

Visible Light Emission

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Effects of well thickness on the light emission in InGaN/GaN and GaN/AlGaN multiple quantum wells

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ◽

10.1109/leosst.1997.619249 ◽

2002 ◽

Author(s):

M. Smith ◽

K.C. Zeng ◽

J.Y. Lin ◽

H.X. Jiang ◽

A. Salvador ◽

...

Keyword(s):

Quantum Wells ◽

Light Emission ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Lineshape Analysis of Intersubband Transitions in Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-406-265 ◽

1995 ◽

Vol 406 ◽

Author(s):

G. Gumbs

Keyword(s):

Absorption Spectrum ◽

Quantum Wells ◽

Exchange Interaction ◽

Phonon Scattering ◽

Peak Position ◽

Absorption Peak ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Transitions ◽

Electron Effective Mass

AbstractConduction intersubband transitions between the ground and first excited states in Al0.3Ga0.7As/GaAs multiple quantum wells (MQWs) are studied as a function of the twodimensional electron gas density (0.75 × 1012 ≤ σ ≤ 3.75 × 1012 cm−2) and temperature (5 ≤ T ≤ 300 K). There is no electron tunneling between the wells and well regions are uniformly doped with silicon donors. Theoretically, we have solved the Schrödinger equation containing the self-consistent Hartree potential, in which the z-dependencies of both electron effective mass and dielectric constant, as well as the non-parabolicity in the conduction energy subband dispersion have been taken into consideration. By applying many-body theory which includes the depolarization-shift from a collective dipole moment and the excitonicshift from the negative exchange interaction, we calculate the absorption spectrum as a function of the incident photon energy hw for different values of T and σ. From this, we can quantitatively analyze both T- and σ-dependencies of the peak position and the full width at half-maximum (FWHM) of peak values. The blue-shift or red-shift in the absorption peak position are quantitatively reproduced as either T or σ is reduced. The exchange interaction which depends on σ, will modify the energy subband dispersion. Therefore, the absorption peak will be broadened by the exchange interaction. The T-dependence of broadening from the optical-phonon scattering is also taken into account by a phenomenological model. From the calculated absorption spectrum as a function of o, we have successfully reproduced and explained the σ-dependence of FWHM measured in recent experiments.

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InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.801 ◽

2011 ◽

Vol 679-680 ◽

pp. 801-803

Author(s):

Ji Sheng Han ◽

Sima Dimitrjiev ◽

Li Wang ◽

Alan Iacopi ◽

Qu Shuang ◽

...

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Light Emission ◽

Multiple Quantum Well ◽

Multiple Quantum Wells ◽

Structural Quality ◽

Multiple Quantum ◽

Si Substrate ◽

Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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