Optical absorption spectra near the fundamental band edge in Cu2In4Se7 bulk crystals

2003 ◽  
Vol 93 (11) ◽  
pp. 8939-8944 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Crystals ◽  
Fundamental Band

Optical Absorption of Doped and Undoped Bulk SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. Miller ◽  
Q. Zhou ◽  
J. Chen ◽  
M. O. Manasreh ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Sharp Peak ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Silicon ◽  
Free Carriers

ABSTRACTOptical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films

1989 ◽  
Vol 28 (Part 2, No. 5) ◽  
pp. L741-L743 ◽  
Author(s):  
Chisato Ogihara ◽  
Hiroshi Ohta ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra

scholarly journals Fast optical absorption spectra calculations for periodic solid state systems

2020 ◽  
Vol 15 (1) ◽  
pp. 89-113
Author(s):  
Felix Henneke ◽  
Lin Lin ◽  
Christian Vorwerk ◽  
Claudia Draxl ◽  
Rupert Klein ◽  
...  
Keyword(s):  
Solid State ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Optical Absorption Spectra

NIR and Upconversion Luminescence Properties of Nd3+ Doped in Gd2O3-CaO-SiO2-B2O3 Glass System

2014 ◽  
Vol 548-549 ◽  
pp. 124-128 ◽  
Author(s):  
S. Insiripong ◽  
S. Kaewjeang ◽  
U. Maghanemi ◽  
H.J. Kim ◽  
N. Chanthima ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Upconversion Luminescence ◽  
Emission Spectra ◽  
Concentration Quenching ◽  
Luminescence Spectra ◽  
Optical Absorption Spectra ◽  
Glass Matrices ◽  
Nir Luminescence

In this work, properties of Nd3+ in Gd2O3-CaO-SiO2-B2O3 glass systems with composition 25Gd2O3-10CaO-10SiO2-(55-x)B2O3-xNd2O3 where x = 0.0, 0.5, 1.0, 1.5, 2.0 and 2.5 mol% were investigated. The optical absorption spectra show peaks at 4F3/2 (877 nm) , 4F5/2+2H9/2 (802 nm), 4F7/2+4S3/2 (743 nm), 4F9/2 (682 nm), 2H11/2 (627 nm), 2G7/2 +4G5/2 (582 nm), 4G7/2 +2K13/2 (527 nm), 4G11/2 (481 nm), 2P1/2 (427 nm) and 2L15/2 + 4D1/2 + 1I11/2+ 4D5/2+ 4D3/2 (355 nm) reflecting the Nd3+ ions in glass matrices. The densities were increased with increasing of Nd2O3 concentration. This indicates the increase of the molecular weight by the replacement of B2O3 with a heavier Nd2O3 oxide in the glass. The upconversion luminescence spectra show bands at 393 nm for all Nd2O3 concentration and the strongest intensity from 2.5 % mol of Nd2O3 was obtained. For NIR luminescence, the intensity of Nd3+ emission spectra increases with increasing concentrations of Nd3+ up to 1.5 mol% and beyond 1.5 mol% the concentration quenching is observed.

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