Optical Absorption of Doped and Undoped Bulk SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. Miller ◽  
Q. Zhou ◽  
J. Chen ◽  
M. O. Manasreh ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Sharp Peak ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Silicon ◽  
Free Carriers

ABSTRACTOptical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

Excitonic Bands in the Optical Absorption Spectra of A3MX6 and A3M2X9 (A = MeNH3, Me2NH2, Me3NH, Me4N; M = Bi, Sb; X = Cl, Br, I)

1994 ◽  
Vol 49 (6) ◽  
pp. 849-851 ◽  
Author(s):  
G. C. Papavassiliou ◽  
I. B. Koutselas
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Visible Spectral Region ◽  
Optical Absorption Spectra ◽  
Absorption Bands ◽  
Uv Visible ◽  
Low Dimensional

The title compounds (natural low-dimensional semiconductors) show strong excitonic optical absorption bands in the UV-visible spectral region, because of the dielectric confinement of excitons. as in the cases of other similar systems based on PbX2-4, SnX2-4. PtI - X - PtIV-X , Cdx,Sy-clusters etc

Optical absorption spectra near the fundamental band edge in Cu2In4Se7 bulk crystals

2003 ◽  
Vol 93 (11) ◽  
pp. 8939-8944 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Crystals ◽  
Fundamental Band

Optical Absorption Spectra and Polarizabilities of Silicon Carbide Nanotubes:  A First Principles Study

2007 ◽  
Vol 111 (51) ◽  
pp. 18864-18870 ◽  
Author(s):  
Lu Wang ◽  
Jing Lu ◽  
Guangfu Luo ◽  
Wei Song ◽  
Lin Lai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
First Principles ◽  
Optical Absorption Spectra ◽  
First Principles Study ◽  
Silicon Carbide Nanotubes

Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems

2011 ◽  
Author(s):  
Masato Ishikawa ◽  
Takashi Nakayama ◽  
Jisoon Ihm ◽  
Hyeonsik Cheong
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Optical Absorption Spectra ◽  
Indirect Band Gap

Optical Investigation of Bi2O3-B2O3 Glass System

2010 ◽  
Vol 93-94 ◽  
pp. 336-339 ◽  
Author(s):  
Kitipun Boonin ◽  
Jakrapong Kaewkhao ◽  
Pichet Limsuwan
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Wavelength Range ◽  
Absorption Edge ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Optical Investigation ◽  
Optical Absorption Spectra ◽  
Molar Volumes

Glasses with composition xBi2O3:(100-x)B2O3 with 30x70 (in mol%) have been prepared using the normal melt-quench technique and investigated their properties. The optical absorption spectra of the glasses have been measured in the wavelength range 400-700 nm. It has been found that, the fundamental absorption edge has been identified from the optical absorption spectra. The values of optical band gap were decreased and the molar volumes were increased, with the addition of Bi2O3, due to the formulation of non-bridging oxygen (NBOs).

Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects

2017 ◽  
Vol 19 (16) ◽  
pp. 10644-10650 ◽  
Author(s):  
Huabing Shu ◽  
Yilong Tong ◽  
Jiyuan Guo
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Electric Field ◽  
Band Gap ◽  
Absorption Spectra ◽  
Optical Absorption Spectra ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Vertical Electric Field ◽  
Variable Band Gap

The variable band-gap of the Si/As heterostructure (left) and optical absorption spectra for AA-stacking under a vertical electric field (right).

Band-gap engineering in amorphous/microcrystalline ScxGa1-xN.

2001 ◽  
Vol 693 ◽  
Author(s):  
M. E. Little ◽  
M. E. Kordesch
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Optical Band Gap ◽  
Optical Absorption Spectra ◽  
X Ray Diffraction ◽  
Band Gap Engineering ◽  
X Ray ◽  
Bilayer Films ◽  
Quartz Substrates

AbstractReactive sputtering was used to grow thin films of ScxGa1-xN with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with increasing Ga concentration between 2.0 and 3.5 eV. Ellipsometry was used to confirm the band gap measurements and provide optical constants in the range 250-1200 nm. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys, not herterogeneous mixtures.

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