Temperature Dependence of Diffuse Streaks in Single‐Crystal Silicon Electron‐Diffraction Patterns

1966 ◽  
Vol 37 (5) ◽  
pp. 2187-2188 ◽  
Author(s):  
Norihisa Kitamura
1969 ◽  
Vol 14 (9) ◽  
pp. 255-258 ◽  
Author(s):  
Tadatsugu Itoh ◽  
Taroh Inada ◽  
Masao Ishiki ◽  
Kenshi Menabe

2008 ◽  
Vol 41 (1) ◽  
pp. 198-205 ◽  
Author(s):  
D. H. Ryan ◽  
L. M. D. Cranswick

The extreme absorption cross section of natural gadolinium has so far precluded routine neutron diffraction work on its alloys and compounds. However, it is shown here that an easily constructed flat-plate sample holder with silicon single-crystal windows can be used to place a thin layer of material in a neutron beam and obtain Rietveld refinement quality diffraction data in a modest time. The flat-plate geometry uses a large area to compensate for the necessarily thin sample. Demonstration data are presented on two intermetallic compounds, Sm3Ag4Sn4and Gd3Ag4Sn4, and it is shown that both structural and magnetic information can be derived from the diffraction patterns. By working at a wavelength of 2.37 Å, it is possible to observe the low-Qdiffraction peaks associated with magnetic ordering. This simple methodology should now enable routine measurements on even the most highly absorbing materials.


Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.


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