Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

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Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

Applied Physics Letters ◽

10.1063/1.1596371 ◽

2003 ◽

Vol 83 (5) ◽

pp. 1014-1016 ◽

Cited By ~ 31

Author(s):

Nae-Man Park ◽

Sang-Hun Jeon ◽

Hyun-Deok Yang ◽

Hyunsang Hwang ◽

Seong-Ju Park ◽

...

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Charge Storage ◽

Silicon Quantum Dots ◽

Size Dependent

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Silicon nitride film formed by NH 3 plasma-enhanced thermal nitridation

10.1117/12.47211 ◽

1991 ◽

Author(s):

Zhi G. Gu ◽

Bing-Zong Li

Keyword(s):

Silicon Nitride ◽

Nitride Film ◽

Silicon Nitride Film ◽

Thermal Nitridation

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Silicon nitride film formed by NH3 plasma enhanced thermal nitridation

Vacuum ◽

10.1016/0042-207x(91)91269-t ◽

1991 ◽

Vol 42 (16) ◽

pp. 1041

Author(s):

Li Bingzong ◽

Gu Zhiguang

Keyword(s):

Silicon Nitride ◽

Nitride Film ◽

Silicon Nitride Film ◽

Thermal Nitridation

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Microbridge Testing of Thin Films Under Small Deformation

MRS Proceedings ◽

10.1557/proc-594-477 ◽

1999 ◽

Vol 594 ◽

Cited By ~ 5

Author(s):

T. Y. Zhang ◽

Y. J. Su ◽

C. F. Qian ◽

M. H. Zhao ◽

L. Q. Chen

Keyword(s):

Thin Films ◽

Residual Stress ◽

Silicon Nitride ◽

Young’S Modulus ◽

Young's Modulus ◽

Chemical Vapor ◽

Small Deformation ◽

Nitride Film ◽

Silicon Nitride Film ◽

Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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