Experimental determination of interfacial-layer thickness from polarization-voltage hysteresis loops in Pb(Zr0.4Ti0.6)O3 thin films

2005 ◽  
Vol 86 (20) ◽  
pp. 202904 ◽  
Author(s):  
A. Q. Jiang ◽  
C. Wang ◽  
B. L. Cheng ◽  
Z. H. Chen
Keyword(s):  
Thin Films ◽  
Experimental Determination ◽  
Layer Thickness ◽  
Interfacial Layer ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Voltage Hysteresis

scholarly journals Experimental Determination of Complex Optical Constants of Air‐Stable Inorganic CsPbI 3 Perovskite Thin Films

2020 ◽  
Vol 14 (6) ◽  
pp. 2000070 ◽  
Author(s):  
Wensheng Yan ◽  
Yi Guo ◽  
Deski Beri ◽  
Stephan Dottermusch ◽  
Haining Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Determination ◽  
Optical Constants

Experimental determination of the upper critical field of epitaxially grown thin films of YBa2Cu3O7−δdown to He temperature

1991 ◽  
Vol 70 (4) ◽  
pp. 2230-2233 ◽  
Author(s):  
R. Wördenweber ◽  
M. O. Abd‐El‐Hamed ◽  
J. Schneider ◽  
O. Laborde
Keyword(s):  
Thin Films ◽  
Experimental Determination ◽  
Critical Field ◽  
Upper Critical Field

scholarly journals Determination of refractive index and layer thickness of nm-thin films via ellipsometry

2017 ◽  
Vol 25 (22) ◽  
pp. 27077 ◽  
Author(s):  
Peter Nestler ◽  
Christiane A. Helm
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Layer Thickness

Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non–noble Metal Oxide Electrodes stored in an H2 Atmosphere

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 369-374 ◽  
Author(s):  
Yoko Takada ◽  
Naoki Okamoto ◽  
Takeyasu Saito ◽  
Kazuo Kondo ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Metal Oxide ◽  
Noble Metal ◽  
Remnant Polarization ◽  
Ferroelectric Properties ◽  
Time Of Flight ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Oxide Electrodes ◽  
Voltage Hysteresis

ABSTRACTWe fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) or Pt top electrodes and investigated the ferroelectric properties of these PLZT capacitors. The shape of polarization–voltage hysteresis loops was essentially unchanged and the decrease in the remnant polarization of the ITO/PLZT/Pt capacitors was smaller than that of the Pt/PLZT/Pt capacitors after annealing with 3% D2 (in N2) at 200°C and 1 Torr (i.e., FGAD). Time of flight secondary mass spectrometry revealed that the D atoms were incorporated into the PLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing, resulting in a decrease in the ferroelectric properties. In comparison, no D ion signal was detected in the PLZT film after FGAD for ITO/PLZT/Pt capacitors.

scholarly journals Experimental determination of change in the liquid layer thickness on the heated surface by confocal sensor

2017 ◽  
Vol 159 ◽  
pp. 00011 ◽  
Author(s):  
Dmitry Feoktistov ◽  
Sergey Misyura ◽  
Anastasia Islamova ◽  
Kseniya Batishcheva
Keyword(s):  
Experimental Determination ◽  
Layer Thickness ◽  
Liquid Layer ◽  
Heated Surface ◽  
Liquid Layer Thickness
Sign in / Sign up

Export Citation Format

Share Document