THE EFFECTS OF PB EXCESS AND FREQUENCY ON POLARIZATION-VOLTAGE HYSTERESIS LOOPS IN Pb(Zr0.3Ti0.7)O3 THIN FILMS

2010 ◽  
Vol 113 (1) ◽  
pp. 41-48 ◽  
Author(s):  
Z. H. CHEN ◽  
A. Q. JIANG ◽  
T. A. TANG
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Voltage Hysteresis

Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non–noble Metal Oxide Electrodes stored in an H2 Atmosphere

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 369-374 ◽  
Author(s):  
Yoko Takada ◽  
Naoki Okamoto ◽  
Takeyasu Saito ◽  
Kazuo Kondo ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Metal Oxide ◽  
Noble Metal ◽  
Remnant Polarization ◽  
Ferroelectric Properties ◽  
Time Of Flight ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Oxide Electrodes ◽  
Voltage Hysteresis

ABSTRACTWe fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) or Pt top electrodes and investigated the ferroelectric properties of these PLZT capacitors. The shape of polarization–voltage hysteresis loops was essentially unchanged and the decrease in the remnant polarization of the ITO/PLZT/Pt capacitors was smaller than that of the Pt/PLZT/Pt capacitors after annealing with 3% D2 (in N2) at 200°C and 1 Torr (i.e., FGAD). Time of flight secondary mass spectrometry revealed that the D atoms were incorporated into the PLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing, resulting in a decrease in the ferroelectric properties. In comparison, no D ion signal was detected in the PLZT film after FGAD for ITO/PLZT/Pt capacitors.

Polarization and Properties of Laminated Fluoropolymer Films

2011 ◽  
Vol 687 ◽  
pp. 359-365
Author(s):  
G. Cao ◽  
Xiao Qing Zhang ◽  
Z. Sun ◽  
Ke Xing Lou ◽  
Z. Xia
Keyword(s):  
Resonance Frequency ◽  
Applied Voltage ◽  
Hysteresis Loops ◽  
Polarization Voltage ◽  
Fusion Bonding ◽  
Young’S Moduli ◽  
Dielectric Resonance ◽  
Void Structure ◽  
Voltage Hysteresis ◽  
Fluoropolymer Films

Laminated fluoropolymer films with regular void structure, fabricated by using a process consisting of the patterning and fusion bonding steps, are polarized to be piezoelectric. The influence of the applied voltage on the piezoelectric d33 coefficient is investigated. The measurements of ferroelectric-like polarization-voltage hysteresis loops are taken to further understand the capability of polarization in the laminated films. The compressive Young’s moduli of the films are determined from the dielectric resonance spectra. The results show that the laminated fluoropolymer films are piezoelectric after proper charging. The maximum d33 coefficients of the five-layer laminated piezoelectrets are achieved at the applied voltage of 5 kV. The remnant charge density of 0.3 mC/m2 is obtained from the polarization-voltage hysteresis loop at a bias voltage of 4 kV. The measured anti-resonance frequency and calculated compressive Young’s modulus for the five-layer laminated films are 112 kHz and 0.48 MPa, respectively.

Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors

2009 ◽  
Vol 60-61 ◽  
pp. 256-259 ◽  
Author(s):  
Ya Feng Luo ◽  
Dan Xie ◽  
Yong Yuan Zang ◽  
Rui Song ◽  
Tian Ling Ren ◽  
...  
Keyword(s):  
Thin Films ◽  
Applied Voltage ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Multilayer Capacitors

Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

A HYBRID MODEL ON HYSTERESIS LOOP AND COERCIVITY IN NANOSTRUCTURED PERMANENT MAGNETS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 627-631 ◽  
Author(s):  
M. J. SUN ◽  
G. P. ZHAO ◽  
J. LIANG ◽  
G. ZHOU ◽  
H. S. LIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Grain Boundary ◽  
Magnetic Moment ◽  
Permanent Magnets ◽  
Hysteresis Loops ◽  
Bulk Materials ◽  
Rotational Model ◽  
Moment Distribution ◽  
Coercivity Mechanism

A simplified micromagnetic model has been proposed to calculate the hysteresis loops of nanostructured permanent magnets for various configurations, including thin films, exchange-coupled double-layer systems and bulk materials. The reversal part of the hysteresis is based on the Stoner–Wohlfarth coherent rotational model and the coercivity mechanism is due mainly to the motion of the transition region (a domain wall like magnetic moment distribution in the grain boundary). The elements of nucleation and pinning models are also incorporated.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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