Low-resistance and highly transparent Ni/indium-tin oxide ohmic contacts to phosphorous-doped p-type ZnO

ABSTRACTWe report on a high transparency low resistance contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with indium tin oxide (NiO/Au/ITO). The NiO/Au/ITO layer shows a specific contact resistivity, c, of 1.8 × 10−3 Ωcm2 that is nearly ten times lower than conventional Ni/Au annealed under N2. Measurements on fully processed LEDs with a NiO/Au/ITO current spreading layer (CSL) show an operating voltage of around 4 V at 20 mA that is comparable to LEDs fabricated with a conventional Ni/Au CSL and a dramatic improvement over the previous ITO data. LED top surface light emission through the NiO/Au/ITO CSL is shown to be greater than that from LEDs with a conventional semi-transparent Ni/Au CSL. Taken together, these results demonstrate the feasibility of using NiO/Au/ITO as a CSL for high performance GaN LEDs.

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Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Journal of Electronic Materials ◽

10.1007/s11664-010-1133-4 ◽

2010 ◽

Vol 39 (5) ◽

pp. 494-498 ◽

Cited By ~ 3

Author(s):

H. Guo ◽

H. B. Andagana ◽

X. A. Cao

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

P Type

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Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

IEEE Photonics Technology Letters ◽

10.1109/lpt.2004.839783 ◽

2005 ◽

Vol 17 (2) ◽

pp. 291-293 ◽

Cited By ~ 52

Author(s):

J.-O. Song ◽

Dong-Seok Leem ◽

Joon Seop Kwak ◽

Y. Park ◽

S.W. Chae ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

Light Emitting Diodes ◽

Luminous Intensity ◽

Light Emitting ◽

P Type

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Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer

Journal of Applied Physics ◽

10.1063/1.2424320 ◽

2007 ◽

Vol 101 (1) ◽

pp. 013711 ◽

Cited By ~ 27

Author(s):

Ja-Soon Jang ◽

Tae-Yeon Seong

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

Thermally Stable ◽

Low Resistance

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Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

Journal of Nanomaterials ◽

10.1155/2016/8202405 ◽

2016 ◽

Vol 2016 ◽

pp. 1-7

Author(s):

Zhanxu Chen ◽

Wenjie Liu ◽

Wei Wan ◽

Gengyan Chen ◽

Yongzhu Chen ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

Three Dimensional ◽

Light Output ◽

Light Extraction Efficiency ◽

Experimental Result ◽

Indium Tin Oxide Electrode ◽

Light Emitting ◽

Ito Electrode

The indium tin oxide (ITO) has been widely applied in light emitting diodes (LEDs) as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE) of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

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