Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

AbstractThe field of major applications of transparent conducting oxides (TCOs) continues to expand, thus generating a growing demand for new materials with lower resistivity and higher transparency over extended wavelength ranges. Moreover, p-type TCOs are opening new horizons for high-performance devices based on p-n junctions. Among the most commonly used TCO materials are zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO2), and indium oxide (In2O3). Still, design and synthesis of improved TCO materials leading to a marked increase in conductivity and robustness remain highly desirable while a more detailed understanding of the conductivity mechanisms is critical to further improvement. For example, there is an accelerating effort worldwide by both academia and industry to develop a transparent conductor that can meet or beat the performance of the commonly used ITO at lower costs and with more physical resilience. This article reviews new developments in TCO materials to be used in various applications spanning from photovoltaics to lighting, smart windows, or gas sensors. The financial stakes, far from being negligible in the TCOs market, and the current scientific and technological challenges to be taken up are analyzed.

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Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

Electrochemical and Solid-State Letters ◽

10.1149/1.2056467 ◽

2005 ◽

Vol 8 (11) ◽

pp. G320 ◽

Cited By ~ 17

Author(s):

Woong-Ki Hong ◽

June-O Song ◽

Hyun-Gi Hong ◽

Keun-Yong Ban ◽

Takhee Lee ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

Flip Chip ◽

Light Emitting Diodes ◽

Light Emitting ◽

Low Resistance ◽

P Type

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Formation of perfect ohmic contact at indium tin oxide/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine interface using ReO3

Scientific Reports ◽

10.1038/srep03902 ◽

2014 ◽

Vol 4 (1) ◽

Cited By ~ 35

Author(s):

Seung-Jun Yoo ◽

Jung-Hung Chang ◽

Jeong-Hwan Lee ◽

Chang-Ki Moon ◽

Chih-I Wu ◽

...

Keyword(s):

Tin Oxide ◽

Ohmic Contact ◽

Indium Tin Oxide

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Roles of Low Temperature Sputtered Indium Tin Oxide for Solar Photovoltaic Technology

Materials ◽

10.3390/ma14247758 ◽

2021 ◽

Vol 14 (24) ◽

pp. 7758

Author(s):

Susana Fernández ◽

José Pablo González ◽

Javier Grandal ◽

Alejandro F. Braña ◽

María Belén Gómez-Mancebo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Near Infrared ◽

Crystalline Silicon ◽

Cost Effective ◽

Superior Performance ◽

Solar Photovoltaic ◽

Full Spectrum ◽

P Type ◽

The Impact

Different functionalities of materials based on indium tin oxide and fabricated at soft conditions were investigated with the goal of being used in a next generation of solar photovoltaic devices. These thin films were fabricated in a commercial UNIVEX 450B magnetron sputtering. The first studied functionality consisted of an effective n-type doped layer in an n-p heterojunction based on p-type crystalline silicon. At this point, the impact of the ITO film thickness (varied from 45 to 140 nm) and the substrate temperature (varied from room temperature to 250 °C) on the heterojunction parameters was evaluated separately. To avoid possible damages in the heterojunction interface, the applied ITO power was purposely set as low as 25 W; and to minimize the energy consumption, no heat treatment process was used. The second functionality consisted of indium-saving transparent conductive multicomponent materials for full spectrum applications. This was carried out by the doping of the ITO matrix with transition metals, as titanium and zinc. This action can reduce the production cost without sacrificing the optoelectronic film properties. The morphology, chemical, structural nature and optoelectronic properties were evaluated as function of the doping concentrations. The results revealed low manufactured and suitable films used successfully as conventional emitter, and near-infrared extended transparent conductive materials with superior performance that conventional ones, useful for full spectrum applications. Both can open interesting choices for cost-effective photovoltaic technologies.

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