Silicon-based spin quantum computation and the shallow donor exchange gate

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P+2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.

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Silicon-Based Quantum Computation

Scalable Quantum Computers ◽

10.1002/3527603182.ch17 ◽

2005 ◽

pp. 253-271 ◽

Cited By ~ 2

Author(s):

B. E. Kane

Keyword(s):

Quantum Computation ◽

Silicon Based

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SILICON-BASED NUCLEAR SPIN QUANTUM COMPUTER

International Journal of Quantum Information ◽

10.1142/s0219749905001225 ◽

2005 ◽

Vol 03 (supp01) ◽

pp. 27-40 ◽

Cited By ~ 4

Author(s):

HSI-SHENG GOAN

Keyword(s):

Solid State ◽

Nuclear Spin ◽

Quantum Computer ◽

Theoretical Progress ◽

Spin Quantum ◽

Basic Physics ◽

Qubit Operations ◽

Silicon Based

We review the basic physics and operation principles of the silicon-based quantum computer proposed by Kane, one of the most promising solid-state quantum computer proposals. We describe in some details how single- and two-qubit operations and readout measurements can, in principle, be performed for the Kane quantum computer. In addition, we also mention briefly its recent theoretical progress and development.

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Radiative recombination processes of thermal donors in silicon

MRS Proceedings ◽

10.1557/proc-692-h6.30.1 ◽

2001 ◽

Vol 692 ◽

Cited By ~ 5

Author(s):

S. Pizzini ◽

S. Binetti ◽

E. Leoni ◽

A. Le Donne ◽

M. Acciarri ◽

...

Keyword(s):

Room Temperature ◽

Light Emission ◽

Deep Level ◽

Line Emission ◽

Shallow Donor ◽

Light Emitting ◽

Microelectronic Technology ◽

Recombination Processes ◽

Transient Spectroscopy ◽

Silicon Based

AbstractThere is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

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