A Novel Privacy-Preserving Authentication Protocol Using Bilinear Pairings for the VANET Environment

With the rapid development of communication and microelectronic technology, the vehicular ad hoc network (VANET) has received extensive attention. However, due to the open nature of wireless communication links, it will cause VANET to generate many network security issues such as data leakage, network hijacking, and eavesdropping. To solve the above problem, this paper proposes a new authentication protocol which uses bilinear pairings and temporary pseudonyms. The proposed authentication protocol can realize functions such as the identity authentication of the vehicle and the verification of the message sent by the vehicle. Moreover, the proposed authentication protocol is capable of preventing any party (peer vehicles, service providers, etc.) from tracking the vehicle. To improve the efficiency of message verification, this paper also presents a batch authentication method for the vehicle to verify all messages received within a certain period of time. Finally, through security and performance analysis, it is actually easy to find that the proposed authentication protocol can not only resist various security threats but also have good computing and communication performance in the VANET environment.

Physics and Modelling of Tri-Layered Strained Channel for Development of Double Gate n-channel FET

The strain silicon technology with FET is a dominant technology providing enrichment in carrier velocity in nanoscaled device by change of band structure arrangement. Leakage reduction while enhancement in drain current is another major objective therefore, designing a nano-regime double gate FET with strained channel is perceived. So, design and implementation of a double gate strained heterostructure on insulator (DG-SHOI) FET with tri-layered channel (s-Si/s-SiGe/s-Si) is the core. Biaxial strain is created in channel by inculcating three layers with optimal thicknesses while narrow channel depletion regions are strongly controlled by equipotential gates. Consequently, maximum charge carriers accumulate in channel due to quantum carrier confinement instigating ballistic transport across the 22 nm channel length device leading to lessening of intervalley scattering. In comparison to existing 22 nm DGSOI FET, drain current augmentation of 56% and transconductance amplification of 87.6% is observed while DIBL is prudently reduced for this newly designed and implemented DG-SHOI FET, signifying advancement in microelectronic technology.

Investigation of Operational Characteristics of Mechatronic Systems in Industry 4.0

This work presents the results of an analysis of the main expected potential problems that may occur in the implementation of the Industry 4.0 reform. It is proved that the pace and level of development of this reform will largely be determined by the effectiveness of the used mechatronic systems. It has also been established that as a result of systematic miniaturization of the nodes of radio-electronic equipment and microelectronic equipment and microelectronic technology, the main problem of these reforms and the implementation of complex technological processes is instrumental support, especially cutting micro-tools. Therefore, the examples of these micro-tools show methods for improving their performance characteristics.

Анализ и исследование материаловедческих и технологических факторов при создании пленочных преобразователей

Проведены анализ и исследование материаловедческих и технологических факторов при создании пленочных преобразователей, определены требования к материалам и их свойствам, технологии формирования элементов преобразователя. Показано, что учет материаловедческих и технологических факторов обеспечивает соответствие параметров пленочного преобразователя с требуемыми, устойчивость к внешним воздействующим факторам, получение пленок исходного состава, стабильность технологии производства. Выбор параметров материалов производится с учетом режимов и условий эксплуатации, статических и динамических нагрузок, действующих на элементы преобразователя, свойств исходных материалов и пленочных элементов. При сопряжении разнородных материалов учитывают коэффициенты линейного расширения. В процессе создания пленочных преобразователей исходные материалы, конструктивные элементы обрабатываются в различных технологических средах и подвергаются тепловым воздействиям, формируются заданные структуры и параметры пленочного преобразователя, и вместе с этим усиливаются несовершенства, имевшиеся в исходных материалах и элементах преобразователя, которые прямо или косвенно влияют на выходные параметры пленочного преобразователя. При изготовлении пленочных элементов преобразователя выбор метода получения тонких пленок определяется назначением пленки, совместимости метода с другими технологическими операциями микроэлектронной технологии. Воспроизводимость электрофизических свойств тонких пленок имеет место при их осаждении с контролируемым составом, что существенно при получении пленок на основе полупроводниковых соединений и формировании чувствительных элементов преобразователя. Анализ и исследования методов получения пленок показали, что энергетическая эффективность процесса ионного распыления материалов и получения тонких пленок заданного состава, технологическая гибкость, возможность регулирования толщины пленок путем изменения величины тока, времени осаждения и давления, при котором оно проводится, являются наиболее оптимальными. The analysis and research of material science and technological factors in the creation of film converters is carried out, the requirements for materials and their properties, the technology for the formation of converter elements are determined. It is shown that taking into account materials science and technology factors ensures that the parameters of the film converter meet the required parameters, resistance to external factors, obtaining films of the original composition, and stability of the production technology. The choice of material parameters is made taking into account operating conditions and conditions, static and dynamic loads acting on the converter elements, the properties of the starting materials and film elements. When pairing dissimilar materials, linear expansion coefficients are taken into account. In the process of creating film converters, the starting materials, structural elements are processed in various technological environments and exposed to thermal influences, the specified structures and parameters of the film converter are formed, and at the same time, the imperfections in the starting materials and converter elements are amplified, which directly or indirectly affect the output parameters film converter. In the manufacture of film elements of the converter, the choice of the method for producing thin films is determined by the purpose of the film, the compatibility of the method with other technological operations of microelectronic technology. The reproducibility of the electrophysical properties of thin films takes place when they are deposited with a controlled composition, which is essential when producing films based on semiconductor compounds and the formation of sensitive elements of the transducer. Analysis and research of methods for producing films showed that the energy efficiency of the process of ion sputtering of materials and the production of thin films of a given composition, technological flexibility, the ability to control the thickness of the films by changing the current, deposition time and pressure at which it is carried out, are the most optimal.

ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ

Электрохимические системы очень перспективны для разработки новой элементной базы для микроэлектроники и для использования в широком спектре инженерных задач. Мы разработали новую микроэлектронную технологию для изготовления электрохимических преобразователей (ЭХП) и новые приборы на основе новых электрохимических микроэлектронных чипов. Планарные электрохимические преобразователи могут использоваться в акселерометрах, сейсмических датчиках, датчиках вращения, гидрофонах и датчиках давления. Electrochemical systems are very promising for the development of a new element base for microelectronics, and for use in a wide range of engineering applications. We have developed a new microelectronic technology for manufacturing electrochemical transducers (ECP) and new devices based on new electrochemical microelectronic chips. Planar electrochemical transducers are used in accelerometers, seismic sensors, rotation sensors, hydrophones and pressure sensors.

The Influence of Catalysts on the Gas Sensitivity of a Gas Sensor Based on SnO2 Films + 1 % at. Si

The paper is devoted to the study of the influence of surface modification by catalysts on the gas sensitivity of a gas sensor. The sample for the study is a gas sensor crystal with dimensions of 1 × 1 mm2, manufactured using microelectronic technology. Its design is represented by a film heater, two sensitive elements (SE) based on tin dioxide with the addition of 1 % at. Si (film thickness = 250 nm, the size of the SE area is 200 x 320 μm2) and contacts for the sensitive layer in the form of an interdigital platinum structure with a distance between contacts of 10 μm. It is established that doping increases the gas sensitivity and lowers the operating temperature.

Technological aspects of the formation, reproducibility and compliance of the parameters of film converters

The analysis and study of materials science and technological factors in the creation of film converters are carried out, the requirements for materials, their properties, and the technology of forming the converter elements are determined. It is shown that taking into account material science and technological factors ensures that the parameters of the film transducer match the required ones, resistance to external infiuencing factors, obtaining films of the initial composition, and stability of the production technology. The choice of material parameters is made taking into account the operating modes and conditions, static and dynamic loads acting on the elements of the converter, the properties of the starting materials and film elements. When joining dissimilar materials, the coefficients of linear expansion are taken into account. In the process of creating film converters, the initial materials, structural elements are processed in various technological environments and, are subjected to thermal effects, the specified structures and parameters of the film converter are formed, and at the same time, the imperfections in the initial materials and converter elements are amplified, which directly or indirectly affect the output parameters of the film converter. In the manufacture of film elements of the transducer, the choice of the method for producing thin films is determined by the purpose of the film, the compatibility of the method with other technological operations of microelectronic technology. The reproducibility of the electrophysical properties of thin films takes place during their deposition with a controlled composition, which is essential for the production of films based on semiconductor compounds and for the formation of the sensitive elements of the transducer. The analysis and study of methods for obtaining films showed that the energy efficiency of the process of ion sputtering of materials and the production of thin films of a given composition, technological fiexibility, the ability to control the thickness of the films by changing the current value, the deposition time and the pressure at which it is carried out are the most optimal.

Investigation of Operational Characteristics of Mechatronic Systems in Industry 4.0

This work presents the results of an analysis of the main expected potential problems that may occur in the implementation of the Industry 4.0 reform. It is proved that the pace and level of development of this reform will largely be determined by the effectiveness of the used mechatronic systems. It has also been established that as a result of systematic miniaturization of the nodes of radio-electronic equipment and microelectronic equipment and microelectronic technology, the main problem of these reforms and the implementation of complex technological processes is instrumental support, especially cutting micro-tools. Therefore, the examples of these micro-tools show methods for improving their performance characteristics.

Modeling of Interdigital Electrodes Geometrical Parameters Effects on Chemical Sensor Response

The detection of volatile organic compounds (VOCs), humidity and toxic industrial chemicals is important for various environmental and industrial applications. The design of interdigital capacitor (IDCs) sensor is carried out in such a way that it would be suitable for microelectronic technology. The basic geometry of IDCs is defined by some parameters such as: number of electrodes N, electrode width W, electrode length L and the separation between electrodes G. The interactions between IDCs sensitive coating and analyte induced a change in the sensors capacitance due to the permittivity variation of the sensitive layer and to the change in polymer thickness (swelling). In this work, a fairly new approach of IDCs based sensor in terms of capacitance calculation has been presented. The results have been obtained from the modeling of the sensors geometry 2D and 3D using multi-physics simulation software COMSOL. The effects of some geometry parameters coupled with swelling measurements for polymeric films have been studied.