Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2058173 ◽

2005 ◽

Vol 98 (6) ◽

pp. 064506 ◽

Author(s):

C. J. Kao ◽

M. C. Chen ◽

C. J. Tun ◽

G. C. Chi ◽

J. K. Sheu ◽

...

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulators ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.2896311 ◽

2008 ◽

Vol 92 (10) ◽

pp. 103507 ◽

Author(s):

E. Waki ◽

T. Deguchi ◽

A. Nakagawa ◽

T. Egawa

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Crystalline Quality ◽

Current Collapse ◽

Cap Layer ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/26/3/037201 ◽

2017 ◽

Vol 26 (3) ◽

pp. 037201 ◽

Author(s):

Lei Wang ◽

Jiaqi Zhang ◽

Liuan Li ◽

Yutaro Maeda ◽

Jin-Ping Ao

Keyword(s):

Low Temperature ◽

Surface Treatment ◽

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4891258 ◽

2014 ◽

Vol 116 (4) ◽

pp. 044507 ◽

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Jingtao Zhao ◽

Yutang Wang ◽

...

Keyword(s):

Theoretical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

physica status solidi (c) ◽

10.1002/pssc.201100408 ◽

2012 ◽

Vol 9 (3-4) ◽

pp. 911-914 ◽

Author(s):

Martin Mikulics ◽

Hilde Hardtdegen ◽

Andreas Winden ◽

Alfred Fox ◽

Michel Marso ◽

...

Keyword(s):

Residual Strain ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

10.1063/1.4848451 ◽

2013 ◽

Author(s):

Nitin Goyal ◽

Benjamin Iniguez ◽

Tor A. Fjeldly

Keyword(s):

Barrier Height ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Surface Barrier ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Applied Physics Letters ◽

10.1063/1.2715032 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123505 ◽

Author(s):

H. F. Sun ◽

C. R. Bolognesi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Anomalous Behavior ◽

Cryogenic Temperatures ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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