Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon

2005 ◽  
Vol 98 (8) ◽  
pp. 084502 ◽  
Author(s):  
Xiangyang Ma ◽  
Liming Fu ◽  
Daxi Tian ◽  
Deren Yang
2006 ◽  
Vol 203 (4) ◽  
pp. 670-676 ◽  
Author(s):  
Xiangyang Ma ◽  
Liming Fu ◽  
Daxi Tian ◽  
Can Cui ◽  
Deren Yang

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.


2010 ◽  
Vol 49 (8) ◽  
pp. 080205 ◽  
Author(s):  
Koji Araki ◽  
Haruo Sudo ◽  
Tatsuhiko Aoki ◽  
Takeshi Senda ◽  
Hiromichi Isogai ◽  
...  

2013 ◽  
Vol 113 (16) ◽  
pp. 163510 ◽  
Author(s):  
Xinpeng Zhang ◽  
Chao Gao ◽  
Maosen Fu ◽  
Xiangyang Ma ◽  
Jan Vanhellemont ◽  
...  

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