Effects of High Temperature Rapid Thermal Processing on the Formation of Oxidation Induced Stacking Faults in 300 mm Nitrogen-Doped Czochralski Silicon Wafers

2019 ◽  
Vol 44 (1) ◽  
pp. 773-778
Author(s):  
Ze Xu ◽  
Xiangyang Ma ◽  
DaXi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Stacking Faults ◽  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon

2005 ◽  
Vol 98 (8) ◽  
pp. 084502 ◽  
Author(s):  
Xiangyang Ma ◽  
Liming Fu ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing

2010 ◽  
Vol 49 (8) ◽  
pp. 080205 ◽  
Author(s):  
Koji Araki ◽  
Haruo Sudo ◽  
Tatsuhiko Aoki ◽  
Takeshi Senda ◽  
Hiromichi Isogai ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Thermal Strain ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4442-4449 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Ichiro Yokoyama ◽  
Kitaek Kang ◽  
Nobuaki Takahashi
Keyword(s):  
High Temperature ◽  
Thermal Behavior ◽  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
Silicon Wafers

Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

2005 ◽  
Vol 22 (9) ◽  
pp. 2407-2410 ◽  
Author(s):  
Cui Can ◽  
Yang De-Ren ◽  
Ma Xiang-Yang ◽  
Fu Li-Ming ◽  
Fan Rui-Xin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen-doped Czochralski silicon

2006 ◽  
Vol 203 (4) ◽  
pp. 670-676 ◽  
Author(s):  
Xiangyang Ma ◽  
Liming Fu ◽  
Daxi Tian ◽  
Can Cui ◽  
Deren Yang
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction
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