Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

2005 ◽  
Vol 87 (19) ◽  
pp. 192101 ◽  
Author(s):  
L. A. Delimova ◽  
I. V. Grekhov ◽  
D. V. Mashovets ◽  
S. E. Tyaginov ◽  
Sangmin Shin ◽  
...  
2005 ◽  
Vol 902 ◽  
Author(s):  
Lyuba A. Delimova ◽  
I. V. Grekhov ◽  
D. V. Mashovets ◽  
Sangmin Shin ◽  
June-Mo Koo ◽  
...  

AbstractA method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.


2018 ◽  
Vol 11 (1) ◽  
pp. 880-888 ◽  
Author(s):  
Subash Adhikari ◽  
Chandan Biswas ◽  
Manh-Ha Doan ◽  
Sung-Tae Kim ◽  
Chandramouli Kulshreshtha ◽  
...  

1996 ◽  
Vol 143 (2) ◽  
pp. 119-124 ◽  
Author(s):  
P. Moran ◽  
G. Jean Francois ◽  
A. Gibert ◽  
P. Pignolet

2021 ◽  
Vol 52 (S2) ◽  
pp. 692-692
Author(s):  
Macai Lu ◽  
Nian Liu ◽  
Lu Gao ◽  
Xueru Mei ◽  
Minggang Liu ◽  
...  

2017 ◽  
Vol 75 ◽  
pp. 161-168 ◽  
Author(s):  
Shin-ichiro Sato ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
Tomihiro Kamiya ◽  
Wataru Kada ◽  
...  

2020 ◽  
Vol 16 (2) ◽  
pp. 97-102
Author(s):  
Nan Chen ◽  
Zhi-xun Wang ◽  
Hao Chen ◽  
Lin Chen ◽  
Yan Zhao ◽  
...  
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